|
|
|
부품번호 | FZT958 기능 |
|
|
기능 | PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | ||
제조업체 | Zetex Semiconductors | ||
로고 | |||
전체 5 페이지수
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - JANUARY 1996
FEATURES
* 1 Amp continuous current
* Up to 2 Amps peak current
* Very low saturation voltage
* Excellent gain characteristics specified up to 1 Amp
COMPLEMENTARY TYPES - FZT957 - FZT857
FZT958 - N/A
PARTMARKING DETAILS - DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT957
FZT957
FZT958
C
E
C
B
FZT958
UNIT
Collector-Base Voltage
VCBO
-300 -400
V
Collector-Emitter Voltage
VCEO
-300 -400
V
Emitter-Base Voltage
VEBO
-6 V
Peak Pulse Current
ICM -2 -1.5 A
Continuous Collector Current
IC
-1 -0.5 A
Power Dissipation at Tamb=25°C
Ptot
3W
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 289
FZT958
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -400 -600
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER -400 -600
V IC=-1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage
V(BR)CEO -400 -550
V IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -6
-8
V IE=-100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
ICBO
ICER
R ≤1kΩ
IEBO
VCE(sat)
VBE(sat)
-50 nA
-1 µA
-50 nA
-1 µA
-10 nA
-100 -150 mV
-150 -200 mV
-340 -400 mV
-830 -950 mV
VCB=-300V
VCB=-300V, Tamb=100°C
VCB=-300V
VCB=-300V, Tamb=100°C
VEB=-6V
IC=-10mA, IB=-1mA*
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-100mA*
IC=-500mA, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-725 -840 mV IC=-500mA, VCE=-10V*
Static Forward
Current Transfer Ratio
Transition Frequency
hFE 100 200
100 200 300
10 20
IC=-10mA, VCE=-10V*
IC=-500mA, VCE=-10V*
IC=-1A, VCE=-10V*
fT 85 MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
19 pF
Switching Times
ton
toff
104
2400
ns
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
VCB=-20V, f=1MHz
IC=-500mA, IB1=-50mA
IB2=50mA, VCC=-100V
3 - 292
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ FZT958.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FZT951 | SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | Zetex Semiconductors |
FZT953 | SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | Zetex Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |