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PDF FZT968 Data sheet ( Hoja de datos )
| Número de pieza | FZT968 | |
| Descripción | PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) POWER TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A
* 6 Amps continuous current (Up to 20 Amps peak )
* High gain and very low saturation voltage
FZT968
C
PARTMARKING DETAIL FZT968
E
C
ABSOLUTE MAXIMUM RATINGS.
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-15 V
Collector-Emitter Voltage
VCEO
-12 V
Emitter-Base Voltage
VEBO
-6 V
Peak Pulse Current
ICM -20 A
Continuous Collector Current IC -6 A
Power Dissipation at Tamb=25°C
Ptot
3W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
-15
-12
-6
Base-Emitter
Saturation Voltage
VBE(sat)
-28
-20
-8
-65
-132
-360
-1050
-10
-1.0
-10
-130
-170
-450
-1200
V
V
V
nA
µA
nA
mV
mV
mV
mV
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-12V
VCB=-12V, Tamb=100°C
VEB=-6V
IC=-500mA, IB=-5mA*
IC=-2A, IB=-50mA*
IC=-6A, IB=-250mA*
IC=-6A, IB=-250mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-870 -1050 mV IC=-6A, VCE=-1V*
Static Forward Current hFE 300 450
Transfer Ratio
300 450 1000
200 300
150 240
50
IC=-10mA, VCE=-1V*
IC=-500mA, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
IC=-20A, VCE=-1V*
Transition Frequency
fT
80 MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
161 pF
Switching Times
ton
toff
120 ns
116 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
VCB=-20V, f=1MHz
IC=-4A, IB1=-400mA
IB2=400mA, VCC=-10V
3 - 294
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