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PDF FZTA42 Data sheet ( Hoja de datos )
| Número de pieza | FZTA42 | |
| Descripción | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 NOVEMBER 93 7
FEATURES
* Suitable for video output stages in TV sets
and switch mode power supplies
* High breakdown voltage
COMPLIMENTARY TYPE FZTA92
PARTMARKING DETAIL DEVICE TYPE IN FULL
FZTA42
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IB
IC
Ptot
Tj:Tstg
VALUE
300
300
5
100
500
2
-55 to +150
UNIT
V
V
V
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 300
UNIT
V
CONDITIONS.
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
V(BR)CEO 300
V(BR)EBO 5
ICBO
V IC=1mA, IB=0*
V IE=100µA, IC=0
0.1 µA VCB=200V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.1 µA VEB=5V, IC=0
0.5 V
IC=20mA, IB=2mA
Base-Emitter
Saturation Voltage
VBE(sat)
Static Forward Current hFE
Transfer Ratio
Transition
Frequency
fT
25
40
40
50
0.9 V
IC=20mA, IB=2mA
MHz
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
IC=10mA, VCE=20V
f=20MHz
Output Capacitance
Cobo
6 pF
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA42 datasheet.
3 - 302
VCB=20V, f=1MHz
1 page | ||
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| PDF Descargar | [ Datasheet FZTA42.PDF ] | |
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