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부품번호 | K2826 기능 |
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기능 | MOSFET ( Transistor ) - 2SK2826 | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2826
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super Low On-State Resistance
RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A)
RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A)
• Low Ciss : Ciss = 7200 pF (TYP.)
• Built-in Gate Protection Diode
ORDERING INFORMATION
PART NUMBER
2SK2826
2SK2826-S
2SK2826-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, –10
±70
±280
100
1.5
150
–55 to + 150
70
490
V
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RA = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.25 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11273EJ2V0DS00 (2nd edition)
Date Published April 1999 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1998
2SK2826
1 000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 83.3 ˚C/W
10
1
Rth(ch-C) = 1.25 ˚C/W
0.1
0.01
0.001
10 µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
TC = 25˚C
10 100 1 000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS=10V
Pulsed
VGS = 0V
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
20
1.0
0.1
0.1
TA = 175˚C
75˚C
25˚C
-25˚C
1.0 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30 Pulsed
20
10
VGS = 4.0 V
VGS = 10 V
0
10
100 1000
ID - Drain Current - A
10
TA = 25˚C
ID = 35 A
0 10 20 30
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
2.0 ID = 1 mA
1.5
1.0
0.5
0
- 50 0
50 100 150 200
Tch - Channel Temperature - ˚C
4 Data Sheet D11273EJ2V0DS00
4페이지 2SK2826
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
2)TO-262 (MP-25 Fin Cut)
10.6 MAX.
10.0
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
4.8 MAX.
(10) 1.3±0.2
4
123
1.3±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3)TO-263 (MP-25ZJ)
(10)
4
4.8 MAX.
1.3±0.2
1.4±0.2
0.7±0.2
(0.5R()0.8R)
2.54 TYP. 1 2 3 2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D11273EJ2V0DS00
7
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