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BU1AUA3WNVX-TL 데이터시트 PDF




ROHM Semiconductor에서 제조한 전자 부품 BU1AUA3WNVX-TL은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 BU1AUA3WNVX-TL 기능
기능 FULL CMOS LDO Regulator
제조업체 ROHM Semiconductor
로고 ROHM Semiconductor 로고


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BU1AUA3WNVX-TL 데이터시트, 핀배열, 회로
Datasheet
CMOS LDO Regulator Series for Portable Equipments
Versatile Package
FULL CMOS LDO Regulator
BUxxUA3WNVX series
General Description
BUxxUA3WNVX series is high-performance FULL
CMOS regulator with 300-mA output, which is mounted
on versatile package SSON004X1010 (1.00mm × 1.00
mm × 0.60mm). It has excellent noise characteristics and
load responsiveness characteristics despite its low circuit
current consumption of 50μA. It is most appropriate for
various applications such as power supplies for logic IC,
RF, and camera modules.ROHM’s.
Features
„ High accuracy detection
„ low current consumption
„ Compatible with small ceramic capacitor (Cin=Co=1.0uF)
„ With built-in output discharge circuit
„ High ripple rejection
„ ON/OFF control of output voltage
„ With built-in over current protection circuit
and thermal shutdown circuit
„ Low dropout voltage
Key Specifications
„ Output voltage:
„ Accuracy output voltage:
„ Low current consumption:
„ Operating temperature range:
1.0V to 3.7V
±1.0% (±25mV)
50μA
-40°C to +85°C
Applications
Battery-powered portable equipment, etc.
Package
SSON004X1010 :
1.00mm x 1.00mm x 0.60mm
Typical Application Circuit
STBY
VIN
STBY
VIN
VOUT
VOUT
GND
GND GND
Fig.1 Application Circuit
Product structure:Silicon monolithic integrated circuit This product is not designed protection against radioactive rays.
www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/11
TSZ02201-0RBR0A300040-1-2
21.MAR.2013.Rev.003




BU1AUA3WNVX-TL pdf, 반도체, 판매, 대치품
BUxxUA3WNVX series
Datasheet
Electrical Characteristics
(Ta=25℃, VIN=VOUT+1.0V (*3), STBY=VIN, Cin=1.0μF, Co=1.0μF, unless otherwise noted.)
PARAMETER
Overall Device
Output Voltage 1
Operating Current
Operating Current (STBY)
Symbol
MIN.
Limit
TYP.
MAX.
Unit
Conditions
VOUT1
IIN
ISTBY
VOUT×0.99
VOUT-25mV
-
-
VOUT
50
-
VOUT×1.01
VOUT+25mV
90
1.0
V
μA
μA
IOUT=10μA,VOUT≧2.5V
IOUT=10μA,VOUT<2.5V
IOUT=0mA
STBY=0V
Ripple Rejection Ratio RR 45 70
- dB VRR=-20dBv,fRR=1kHz,IOUT=10mA, VIN=3.6V
- 470 700 mV 1.0V≦VOUT<1.2V(IOUT=300mA)
- 350 500 mV 1.2V≦VOUT<1.5V(IOUT=300mA)
Dropout Voltage
VSAT
-
-
280 380 mV 1.5V≦VOUT<1.7V(IOUT=300mA)
250 320 mV 1.7V≦VOUT<2.1V(IOUT=300mA)
- 220 260 mV 2.1V≦VOUT<2.5V(IOUT=300mA)
- 200 220 mV
Line Regulation
VDL -
2 20 mV
Load Regulation
VDLO
Over-current Protection (OCP)
-
25 45 mV
Limit Current
ILMAX
305
550
- mA
Short Current
ISHORT
50
150 300 mA
Standby Block
Discharge Resistor
RDSC
20
50
80 Ω
STBY Pin Pull-down Current ISTB
0.1
0.9
8.0 μA
ON
STBY Control Voltage
OFF
VSTBH
VSTBL
1.2
-0.3
-
-
5.5 V
0.3 V
Output Voltage 2
VOUT2
1.7
1.8
1.9
●This product is not designed for protection against radioactive rays.
(*3) VIN=2.5V for VOUT≦1.5V
(*4) VIN=2.5V to 5.5V for VOUT≦1.5V
V
2.5V≦VOUT(IOUT=300mA)
VIN=VOUT+1.0V to 5.5V(*4), IOUT=10μA
IOUT=0.01mA to 300mA
Vo=VOUT*0.95
Vo=0V
VIN=5.5V, STBY=0V, VOUT=2.6V
STBY=1.5V
VIN=2.375V to 2.625V
VOUT=1.8V, IOUT=0.01mA to 300mA, Ta=-40~85℃
Block Diagrams
VIN
VIN
4
Cin
GND 2
STBY
STBY
3
VREF
OCP
TSD
STBY
Discharge
Fig. 2 Block Diagrams
VOUT
1
VOUT
Co
Cin・・・1.0μF (Ceramic)
Co ・・・1.0μF (Ceramic)
www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
4/11
TSZ02201-0RBR0A300040-1-2
21.MAR.2013.Rev.003

4페이지










BU1AUA3WNVX-TL 전자부품, 판매, 대치품
BUxxUA3WNVX series
z Reference data BU18UA3WNVX (Ta=25ºC unless otherwise specified.)
Datasheet
LOAD TRANSIENT RESPONSE
Trise=Tfall=1us
50mA
IOUT
0mA
LOAD TRANSIENT RESPONSE
Trise=Tfall=1us
300mA
IOUT
0mA
VOUT
10µs/div
Fig. 15
Vout=1.8V
VOUT
10µs/div
Fig. 16
Vout=1.8V
LINE TRANSIENT RESPONSE
Slew Rate = 0.5V/µs
2.9V
VIN
2.3V
1ms/div
Fig. 17
VOUT
Vout=1.8V
Iout=300mA
LINE TRANSIENT RESPONSE
Slew Rate = 0.5V/µs
2.9V
VIN
2.3V
1ms/div
Fig. 18
VOUT
Vout=1.8V
Iout=1mA
LINE TRANSIENT RESPONSE
Slew Rate = 0.5V/µs
3.6V
VIN
2.1V
1ms/div
Fig. 19
VOUT
Vout=1.8V
Iout=300mA
Vout=1.8V
Iout=1mA
VIN RAMP UP, RAMP DOWN RESPONSE
VIN
VOUT
200ms/div
Fig. 20
www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
7/11
TSZ02201-0RBR0A300040-1-2
21.MAR.2013.Rev.003

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부품번호상세설명 및 기능제조사
BU1AUA3WNVX-TL

FULL CMOS LDO Regulator

ROHM Semiconductor
ROHM Semiconductor

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