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부품번호 | G1A 기능 |
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기능 | GLASS PASSIVATED JUNCTION RECTIFIER | ||
제조업체 | General Semiconductor | ||
로고 | |||
전체 2 페이지수
G1A THRU G1M
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
DO-204AP
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.150 (3.8)
0.100 (2.5)
DIA.
0.240 (6.1)
MAX.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
*Brazed-lead assembly is covered by Patent No. 3,930,306
FEATURES
♦ High temperature metallurgically bonded
constructed rectifiers
♦ Glass passivated cavity-free junction in
D0-204AP package
♦ Hermetically sealed package
♦ 1.0 ampere operation
at TA=100°C with no
thermal runaway
♦ Typical IR less than 0.1µA
♦ Capable of meeting environmental standards of
MIL-S-19500
♦ High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-204AP solid glass body
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.02 ounce, 0.56 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS G1A G1B
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
VRRM
VRMS
VDC
I(AV)
IFSM
50 100
35 70
50 70
Maximum instantaneous forward voltage at 1.0A
Maximum full load reverse current, full cycle average
0.375” (9.5mm) lead length at TA=100°C
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=150°C
Typical reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
VF
IR(AV)
IR
trr
CJ
RΘJL
TJ, TSTG
1.2
NOTES:
(1) Measured with IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length P.C.B. mounted
G1D G1G G1J G1K G1M UNITS
200 400 600 800 1000 Volts
140 280 420 560 700 Volts
200 400 600 800 1000 Volts
1.0 Amp
50.0
1.1
200.0
2.0
100.0
1.5
15.0
55.0
65 to +175
Amps
Volts
µA
µA
µs
pF
°C/W
°C
4/98
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구 성 | 총 2 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
G1-200B-85-1.6 | Processor Series Low Power Integrated x86 Solution | National Semiconductor |
G1-200P-85-1.6 | Processor Series Low Power Integrated x86 Solution | National Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |