Datasheet.kr   

G1A 데이터시트 PDF




General Semiconductor에서 제조한 전자 부품 G1A은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 G1A 자료 제공

부품번호 G1A 기능
기능 GLASS PASSIVATED JUNCTION RECTIFIER
제조업체 General Semiconductor
로고 General Semiconductor 로고


G1A 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 2 페이지수

미리보기를 사용할 수 없습니다

G1A 데이터시트, 핀배열, 회로
G1A THRU G1M
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
DO-204AP
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.150 (3.8)
0.100 (2.5)
DIA.
0.240 (6.1)
MAX.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
*Brazed-lead assembly is covered by Patent No. 3,930,306
FEATURES
High temperature metallurgically bonded
constructed rectifiers
Glass passivated cavity-free junction in
D0-204AP package
Hermetically sealed package
1.0 ampere operation
at TA=100°C with no
thermal runaway
Typical IR less than 0.1µA
Capable of meeting environmental standards of
MIL-S-19500
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-204AP solid glass body
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.02 ounce, 0.56 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS G1A G1B
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
VRRM
VRMS
VDC
I(AV)
IFSM
50 100
35 70
50 70
Maximum instantaneous forward voltage at 1.0A
Maximum full load reverse current, full cycle average
0.375” (9.5mm) lead length at TA=100°C
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=150°C
Typical reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
VF
IR(AV)
IR
trr
CJ
RΘJL
TJ, TSTG
1.2
NOTES:
(1) Measured with IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length P.C.B. mounted
G1D G1G G1J G1K G1M UNITS
200 400 600 800 1000 Volts
140 280 420 560 700 Volts
200 400 600 800 1000 Volts
1.0 Amp
50.0
1.1
200.0
2.0
100.0
1.5
15.0
55.0
65 to +175
Amps
Volts
µA
µA
µs
pF
°C/W
°C
4/98





구       성 총 2 페이지수
다운로드[ G1A.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
G1-200B-85-1.6

Processor Series Low Power Integrated x86 Solution

National Semiconductor
National Semiconductor
G1-200P-85-1.6

Processor Series Low Power Integrated x86 Solution

National Semiconductor
National Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵