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부품번호 | 4N60AF 기능 |
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기능 | N-Channel Power MOSFET / Transistor | ||
제조업체 | nELL | ||
로고 | |||
SEMICONDUCTOR
4N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(4A, 600Volts)
DESCRIPTION
The Nell 4N60 is a three-terminal silicon
device with current conduction capability
of 4A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 2.5Ω@VGS = 10V
Ultra low gate charge(20nC max.)
Low reverse transfer capacitance
(CRSS = 8pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
G
DS
TO-251 (I-PAK)
(4N60F)
D
D
G
S
TO-252 (D-PAK)
(4N60G)
GDS
TO-220AB
(4N60A)
GDS
TO-220F
(4N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
4
600
2.5 @ VGS = 10V
20
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
Page 1 of 10
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
Current rating, ID
4 = 4A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
F = TO-251(I-PAK)
G = TO-252(D-PAK)
4N60 Series RRooHHSS
Nell High Power Products
4 N 60 A
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* lSD controlled by pulse period
* D.U.T.-Device under test
VDD
VGS
(Driver)
lSD
(D.U.T)
VDS
(D.U.T)
P.W.
Period
D= P.W.
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
www.nellsemi.com
Page 4 of 10
4페이지 SEMICONDUCTOR
■ TYPICAL CHARACTERISTICS
Fig.5 On-State characteristics
10
VGS
Top: 10V
9V
8V
7V
6V
5.5V
Bottorm: 5.0V
1
10V
8V
6V
5V
0.1
0.1
Note:
1. 250µs Pulse Test
2. TC = 25°C
1 10
Drain-to-Source voltage, VDS (V)
4N60 Series RRooHHSS
Nell High Power Products
Fig.6 Transfer characteristics
10
25°C
1 150°C
0.1
2
Note:
1. VDS = 50V
2. 250µs Pulse Test
4 6 8 10
Gate-Source voltage, VGS (V)
Fig.7 On-Resistance variation vs drain
current and gate voltage
Fig.8 Body diode forward voltage variation
vs. source current and temperature
6
10
5
150ºC
4 25ºC
3 VGS = 10V
2
1
Note:
1. TC = 25°C
0
0 24
6
VGS = 20V
8 10 12
1
Note:
1. VGS = 0V
2. 250µs Test
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Drain current, ID(A)
Source-Drain voltage, VSD (V)
Fig.9 Capacitance characteristics
(Non-Repetitive)
Fig.10 Gate charge characteristics
1200
1000
Ciss = Cgs +Cgd (Cds = shorted )
Coss = Cds +Cgd Crss = Cgd
Ciss
800
600
400
200
Coss
Crss
Note:
1. VGS = 0V
2. f = 1MHz
0
0.1
1
10
Drain-Source voltage, VDS (V)
www.nellsemi.com
12
10 VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
Note:
1. lD = 4A
0
0 5 10 15 20
Total gate charge, QG (nC)
Page 7 of 10
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7페이지 | |||
구 성 | 총 10 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
4N60A | N-Channel Power MOSFET / Transistor | nELL |
4N60AF | N-Channel Power MOSFET / Transistor | nELL |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |