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PDF 4N60F Data sheet ( Hoja de datos )
| Número de pieza | 4N60F | |
| Descripción | Surface Mount N-Channel Power MOSFET | |
| Fabricantes | WEITRON | |
| Logotipo |  |
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4N60
Surface Mount N-Channel Power MOSFET
P b Lead(Pb)-Free
Description:
The WEITRON 4N60 is a high voltage MOSFET and is designed
to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used
at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
Features:
2 DRAIN
*
*
RDS(ON) =2.5 Ohms @VGS
Ultra low gate charge
=10V
* Low reverse transfer Capacitance
1 GATE
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
3
SOURCE
DRAIN CURRENT
4 AMPERES
DRAIN SOURCE VOLTAGE
600 VOLTAGE
D-PAK3/(TO-251)
D-PAK/(TO-252)
TO-220 TO-220F
Maximum Ratings(T A=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
VDSS
600
V
VGSS ±30
Avalanche Current - (Note 1)
Continuous Drain Current @ TC=25˚C
@ TC=100˚C
Pulsed Drain Current, TP Limited by TJMAX - (Note 1)
IAR 4.4
ID
4.0
2.8
A
IDM 16
Avalanche Energy, Single Pulsed (Note 2)
Avalanche Energy, Repetitive, Limited by TJMAX
EAS 276 mJ
EAR 10.6 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5 V/ns
Total Power Dissipation
4N60P(T C=25˚C)
4N60F(T C=25˚C)
4N60I/D(TC=25˚C)
4N60P( Derate above25˚C)
4N60F( Derate above25˚C)
4N60I/D( Derate above25˚C)
100
33
77
PD 0.8 W
0.26
0.69
Operating Junction and Storage Temperature Range
TJ,Tstg
-55~+150
˚C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
WEITRON
http:www.weitron.com.tw
1/9
13-Apr-2011
1 page  
4N60
Test Circuits And Waveforms(cont.)
VDS
VGS
RG
RL
VDD
VDS 90%
10V
Pulse Width ≤ 1 s
Duty Factor ≤0.1%
D.U.T.
10%
VGS
tD(ON )
tR
tD (OFF)
tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
50k as D.U.T.
12V
0.2 F
0.3 F
10V
QG
VGS
VDS
QGS
QGD
3mA
DUT
VG
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
10V
RD
tp
D.U.T.
VDD
IAS
tp Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
WEITRON
http://www.weitron.com.tw
5/9
13-Apr-2011
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 4N60F.PDF ] | |
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