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부품번호 | FQPF4N60C 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | HAOHAI | ||
로고 | |||
4A, 600V, N沟道 场效应晶体管 产品参数规格书
工业型号
FQP4N60C
FQPF4N60C
公司型号
H4N60P
H4N60F
通俗命名
4N60
H
HAOHAI
封装标识
P: TO-220AB
F: TO-220FP
包装方式
条管装
盒装箱装
每管数量
50Pcs
4N60 Series
N-Channel MOSFET
每盒数量
每箱数量
1000Pcs
5000Pcs
■Features
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge: 15nC(Typ.)
Extended Safe Operating Area
Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V
100% Avalanche Tested
Package: TO-220AB & TO-220F
ID=4A
BVDSS=600V
RDS(on)=2.0Ω
■特点
导通电阻低、开关速度快、驱动简单、可并联使用、输入阻抗高、符合RoHS规范
■应用范围
开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源、
各种充电器、电子整流器、电子变压器、逆变器、控制器、转换器、
风扇控制板、以及电源适配器、汽车稳压器等线性放大和功率开关电路
■封装形式
TO-220P 或 TO-220AB(半塑封)
TO-220F 或 TO-220FP(全塑封)
4N60 Series Pin Assignment
3-Lead Plastic TO-220AB
Package Code: P
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
2D
Series Symbol:
1G
3S
■ Absolute Maximum Ratings(TC=25℃ unless otherwise specified)
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
IAR
EAR
Drain-Source Voltage
Drain Current-Continuous (TC=25℃)
Drain Curren-Continuous (TC=100℃)
Drain Current – Pulsed (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt
Peak Diode Recovery dv/dt (Note 3)
PD
Power Dissipation (TC=25℃)
Power Dissipation - Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature ( TO-220F )
■ Thermal Resistance Characteristics
Symbol
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
TO-220AB
Typ.
Max.
-- 1.25
0.5 --
-- 62.5
Value
TO-220AB TO-220F
600 600
4.0 4.0*
2.5 2.5*
16 16*
±30 ±30
240 240
4.0 4.0
10 10
5.5 5.5
100 33
0.8 0.26
-50 ~ +150
300
TO-220F
Typ. Max.
-- 3.79
-- --
-- 62.5
Units
V
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
Units
℃/W
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4A, 600V, N沟道 场效应晶体管 产品参数规格书
Typical Performance Characteristics (Continued)
4N60 Series
N-Channel MOSFET
Fig-7. Breakdown Voltage Variation vs Temperature
Fig-8. On-Resistance Variation vs Temperature
TJ, Junction Temperature [℃]
Fig-9. Maximum Safe Operating Area
TJ, Junction Temperature [℃]
Fig-10. Maximum Drain Current vs Case Temperature
VDS, Drain-Source Voltage [V]
TC, Case Temperature [℃]
Fig-11. Transient Thermal Response Curve
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t1,Square Wave Pulse Duration [sec]
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4페이지 4A, 600V, N沟道 场效应晶体管 产品参数规格书
Manufacturers version information
2010-01-05 , HAOHAI ™ Product Data-S1.0
2013-05-21 , HAOHAI ™ Product Data-S1.1
2014-06-05 , HAOHAI ™ Product Data-S1.2
4N60 Series
N-Channel MOSFET
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SHENZHEN HAOHAI ELECTRONICS CO., LTD.
2 floor(whole floor), BAOXIN Building. 0 Lane on the 8th. Yufeng Garden.
82 District. BAOAN District, Shenzhen City, Guangdong Province, China.
中國 廣東省 深圳市 寶安區 82区 裕豐花園 零巷8號 寶馨樓 二楼 (全层)
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FAX: +86-755-27801767
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E-mail:[email protected]
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부품번호 | 상세설명 및 기능 | 제조사 |
FQPF4N60 | 600V N-Channel MOSFET | Fairchild Semiconductor |
FQPF4N60C | N-Channel MOSFET | HAOHAI |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |