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부품번호 | IRF1018ESLPbF 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 11 페이지수
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97125
IRF1018EPbF
IRF1018ESPbF
IRF1018ESLPbF
HEXFET® Power MOSFET
D VDSS
60V
RDS(on) typ.
7.1m:
G max. 8.4m:
S ID
79A
D
DS
G
TO-220AB
IRF1018EPbF
G
Gate
D
D
DS
G
D2Pak
IRF1018ESPbF
DS
G
TO-262
IRF1018ESLPbF
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw k
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
RθJA
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Junction-to-Case j
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 j
Junction-to-Ambient (PCB Mount) , D2Pak ij
Max.
79
56
315
110
0.76
± 20
21
-55 to + 175
300
10lbxin (1.1Nxm)
88
47
11
Typ.
–––
0.50
–––
–––
Max.
1.32
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
2/28/08
IRF1018E/S/SLPbF
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
80
60
40
20
0
25
50 75 100 125 150
TC , CaseTemperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
0.8
0.6
0.4
0.2
0.0
0
10 20 30 40 50
VDS, Drain-to-Source Voltage (V)
60
Fig 11. Typical COSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100 1msec
100μsec
10
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
10msec
DC
10
VDS, Drain-toSource Voltage (V)
100
Fig 8. Maximum Safe Operating Area
80
Id = 5mA
75
70
65
60
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
400
350
ID
TOP 5.3A
11A
300 BOTTOM 47A
250
200
150
100
50
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
www.irf.com
4페이지 IRF1018E/S/SLPbF
+
-
RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
*
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD
**
+
• ISD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
V*G*S*=10V
VDD
ISD
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 21. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 22a. Unclamped Inductive Test Circuit
IAS
Fig 22b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 23a. Switching Time Test Circuit
L
VCC
DUT
0
210K S
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 23b. Switching Time Waveforms
Id
Vgs
Vds
Vgs(th)
Fig 24a. Gate Charge Test Circuit
www.irf.com
Qgodr
Qgd Qgs2 Qgs1
Fig 24b. Gate Charge Waveform
7
7페이지 | |||
구 성 | 총 11 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
IRF1018ESLPbF | Power MOSFET ( Transistor ) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |