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PDF BAT54CWT1G Data sheet ( Hoja de datos )
| Número de pieza | BAT54CWT1G | |
| Descripción | Schottky Diodes | |
| Fabricantes | Fairchild Semiconductor | |
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BAT54SWT1G/BAT54CWT1G
Schottky Diodes
April 2005
Connection Diagram
3
BAT54SWT1G
BAT54CWT1G
33
SOT-323
12
MARKING
BAT54SWT1G = YB
BAT54CWT1G = YC
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
PD
RθJA
Power Dissipation
Thermal Resistance, Junction to Ambient
FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
VR Breakdown Voltage
VF Forward Voltage
IR Reverse Leakage
CT Total Capacitance
trr Reverse Recovery Time
IR = 10µA
IF = 0.1mA
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA
VR = 25V
VR = 1V, f = 1.0MHz
IF = IR = 10mA, IRR = 1.0mA,
RL = 100Ω
12
12
Value
30
200
600
-65 to +125
-65 to +125
Unit
V
mA
mA
°C
°C
Value
232
430
Unit
mW
°C/W
Min.
30
Max.
240
320
400
500
0.8
2
10
5.0
Units
V
mV
mV
mV
mV
V
µA
pF
ns
©2005 Fairchild Semiconductor Corporation
BAT54SWT1G/BAT54CWT1G Rev. A
1
www.fairchildsemi.com
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