FGPF30N45T Datasheet PDF - Fairchild Semiconductor
| Part Number | FGPF30N45T | |
| Description | 30A PDP Trench IGBT | |
| Manufacturers | Fairchild Semiconductor | |
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FGPF30N45T
450V, 30A PDP Trench IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat) =1.55V @ IC = 30A
• High input impedance
• Fast switching
Applications
• PDP System
April 2009
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new sesries of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
C
TO-220F
1
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
VCES
VGES
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
* Ic_pluse limited by max Tj
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
450
±30
120
50.4
20.1
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
2.48
62.5
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2009 Fairchild Semiconductor Corporation
FGPF30N45T Rev. A
1
www.fairchildsemi.com
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Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
200
Common Emitter
VGE = 15V, RG = 15Ω
100 TC = 25oC
TC = 125oC
tr
td(on)
10
5 10 15 20 25 30
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
1000
Figure 14. Turn-off Characteristics vs.
Collector Current
500
100
tf
td(off)
10
5
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
10 15 20 25
Collector Current, IC [A]
30
Figure 16. Switching Loss vs.Gate Resistance
1000
Eoff
100
10
0
Eon Common Emitter
VCC = 200V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 17. Transient Thermal Impedance of IGBT
100
Eoff
Eon
10
1
5
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
10 20
Collector Current, IC [A]
30
10
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
0.01
single pulse
1E-3
1E-5
1E-4
PDM
t1
Duty Factot2r, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
10 100
FGPF30N45T Rev. A
5
www.fairchildsemi.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FGPF30N45T electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
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