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부품번호 | G7N60A4D 기능 |
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기능 | HGTG7N60A4D | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 9 페이지수
Data Sheet
HGTG7N60A4D, HGTP7N60A4D,
HGT1S7N60A4DS
January 2005
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG7N60A4D, HGTP7N60A4D and
HGT1S7N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49331. The diode
used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49333.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG7N60A4D
HGTP7N60A4D
TO-247
TO-220AB
G7N60A4D
G7N60A4D
HGT1S7N60A4DS
TO-263AB
G7N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S7N60A4DS9A.
Symbol
C
Features
• >100kHz Operation At 390V, 7A
• 200kHz Operation At 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-220AB
E
CG
COLLECTOR
(FLANGE)
G
E
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2005 Fairchild Semiconductor Corporation
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
30
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
25
TJ = 125oC
20
30
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
25
20
15 15
10
TJ = 25oC
5 TJ = 150oC
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
10
5
0
0
TJ = 125oC
TJ = 150oC
TJ = 25oC
0.5 1.0 1.5 2.0 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
3.0
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
500
RG = 25Ω, L = 1mH, VCE = 390V
400
TJ = 125oC, VGE = 12V, VGE = 15V
300
200
100
0
0
TJ = 25oC, VGE = 12V, VGE = 15V
2 4 6 8 10 12
ICE, COLLECTOR TO EMITTER CURRENT (A)
14
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
350
RG = 25Ω, L = 1mH, VCE = 390V
300
250
200
TJ = 125oC, VGE = 12V OR 15V
150
100
50
TJ = 25oC, VGE = 12V OR 15V
0
0 2 4 6 8 10 12 14
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
16 RG = 25Ω, L = 1mH, VCE = 390V
TJ = 25oC, VGE = 12V
14 TJ = 125oC, VGE = 12V
12 TJ = 25oC, VGE = 15V
10
TJ = 125oC, VGE = 15V
8
0 2 4 6 8 10 12
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
14
©2005 Fairchild Semiconductor Corporation
40
RG = 25Ω, L = 1mH, VCE = 390V
30 TJ = 25oC, VGE = 12V, VGE = 15V
20
10
TJ = 125oC, VGE = 12V, VGE = 15V
0
0 2 4 6 8 10 12 14
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
4페이지 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
100
0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-210-5
SINGLE PULSE
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG7N60A4D
RG = 25Ω
L = 1mH
DUT
+
-
VDD = 390V
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
ICE
EOFF
10%
EON2
90%
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 25. SWITCHING TEST WAVEFORMS
©2005 Fairchild Semiconductor Corporation
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
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G7N60A4D | HGTG7N60A4D | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |