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Número de pieza | IRFP7430PBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! StrongIRFETTM
IRFP7430PbF
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free*
D
G
S
G
Gate
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.0mΩ
1.3mΩ
c404A
195A
D
S
D
G
TO-247AC
IRFP7430PbF
D
Drain
S
Source
Ordering Information
Base Part Number
IRFP7430PbF
Package Type
TO-247
Standard Pack
Form
Tube
Quantity
50
Complete Part Number
IRFP7430PbF
6.0
ID = 100A
4.0
TJ = 125°C
2.0
TJ = 25°C
0.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
500
Limited By Package
400
300
200
100
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
February 19, 2015
1 page 1000
100 TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode
Forward Voltage
47
Id = 1.0mA
46
2.5
45
44
43
42
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
6.0
4.0
IRFP7430PbF
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
100
Limited by package
10
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
DC
10 100
VDS, Drain-toSource Voltage (V)
Fig 10. Maximum Safe Operating Area
2.5
VDS= 0V to 32V
2.0
1.5
1.0
0.5
0.0
0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical COSS Stored Energy
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
2.0
0.0
0
200 400 600 800 1000 1200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
February 19, 2015
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRFP7430PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFP7430PBF | Power MOSFET ( Transistor ) | International Rectifier |
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