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R8120S3S 데이터시트 PDF




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R8120S3S 데이터시트, 핀배열, 회로
May 2002
ISL9R8120P2 / ISL9R8120S3S
8A, 1200V Stealth™ Diode
General Description
The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes
optimized for low loss performance in high frequency hard
switched applications. The Stealth™ family exhibits low
reverse recovery current (IRM(REC)) and exceptionally soft
recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low IRM(REC) and short ta phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49413.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 32ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
JEDEC TO-220AC
CATHODE
(BOTTOM SIDE
METAL)
ANODE
CATHODE
JEDEC TO-263AB
N/C
ANODE
CATHODE
(FLANGE)
Symbol
K
A
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 105oC)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
1200
1200
1200
8
16
100
71
20
-55 to 150
300
260
V
V
V
A
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9R8120P2 / ISL9R8120S3S Rev. A




R8120S3S pdf, 반도체, 판매, 대치품
Typical Performance Curves (Continued)
12
11
IF = 16A
10
VR = 780V, TC = 125oC
9 IF = 8A
8
7
6
5 IF = 4A
4
3
2
100
200 300 400 500 600 700 800 900 1000
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs
dIF/dt
500
f = 1MHZ
400
300
200
100
2000
1800
VR = 780V, TC = 125oC
IF = 16A
1600
1400
1200
IF = 8A
1000
800
IF = 4A
600
400
100
200 300 400 500 600 700 800 900 1000
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 8. Reverse Recovered Charge vs dIF/dt
-4.4 500
IF = 8A, VR = 780V, dIF/dt = 200A/µs
-4.8
IRM(REC)
-5.2
450
400
-5.6
tRR
350
0
0.03
0.1
1 10
VR, REVERSE VOLTAGE (V)
100
Figure 9. Junction Capacitance vs Reverse
Voltage
-6.0
25
50 75 100 125
TC, CASE TEMPERATURE (oC)
300
150
Figure 10. Reverse Recovery Current and Times
vs Case Temperature
8
6
4
2
0
90 100 110 120 130 140 150
TC, CASE TEMPERATURE (oC)
Figure 11. DC Current Derating Curve
©2002 Fairchild Semiconductor Corporation
ISL9R8120P2 / ISL9R8120S3S Rev. A

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부품번호상세설명 및 기능제조사
R8120S3S

ISL9R8120S3S

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