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PDF BLF1820-90 Data sheet ( Hoja de datos )
| Número de pieza | BLF1820-90 | |
| Descripción | UHF power LDMOS transistor | |
| Fabricantes | Philips | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF1820-90
UHF power LDMOS transistor
Product specification
Supersedes data of 2001 Mar 07
2003 Feb 10
1 page  
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF1820-90
15
handbook, halfpage
Gp
(dB)
(2) (3)
(1)
10
(2)
(1)
(3)
MLD558
50
ηD
(%)
40
30
20
10
50
0 40 80 PL (W) 120
VDS = 26 V; IDQ = 750 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
(1) IDQ = 600 mA. (2) IDQ = 750 mA.
(3) IDQ = 900 mA.
Fig.4 Power gain and drain efficiency as functions
of average load power; typical values.
0
handbook, halfpage
d3
(dBc)
−20
−40
−60
(1)
(2)
(3)
MLD559
−80
0
40 80 120
PL (PEP) (W)
VDS = 26 V; IDQ = 750 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
(1) IDQ = 600 mA. (2) IDQ = 750 mA.
(3) IDQ = 900 mA.
Fig.5 Intermodulation distortion products as
functions of peak envelope load power;
typical values.
handbook, h6alfpage
Zi
(Ω)
4
2
0
−2
1.6
1.8
MLD560
ri
xi
2 2.2
f (GHz)
handbook, h4alfpage
ZL
(Ω)
2
RL
0
−2
−4
1.6
XL
1.8
MLD561
2 2.2
f (GHz)
VDS = 26 V; IDQ = 750 mA; PL = 90 W; Th ≤ 25 °C.
Fig.6 Input impedance as a function of frequency
(series components); typical values.
VDS = 26 V; IDQ = 750 mA; PL = 90 W; Th ≤ 25 °C.
Fig.7 Load impedance as a function of frequency
(series components); typical values.
2003 Feb 10
5
5 Page 
Philips Semiconductors
UHF power LDMOS transistor
NOTES
Product specification
BLF1820-90
2003 Feb 10
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BLF1820-90.PDF ] | |
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