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Datasheet G8423-05 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | G8423-05 | InGaAs PIN photodiode |  Hamamatsu Corporation | diode |
G84 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | G8421 | InGaAs PIN photodiode Hamamatsu Corporation diode | | |
| 2 | G8421-03 | InGaAs PIN photodiode Hamamatsu Corporation diode | | |
| 3 | G8421-05 | InGaAs PIN photodiode Hamamatsu Corporation diode | | |
| 4 | G8422 | InGaAs PIN photodiode PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features Applications
l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm
s Specifications / Absolute maximum rati Hamamatsu Corporation diode | | |
| 5 | G8422-03 | InGaAs PIN photodiode PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features Applications
l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm
s Specifications / Absolute maximum rati Hamamatsu Corporation diode | | |
| 6 | G8422-05 | InGaAs PIN photodiode PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features Applications
l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm
s Specifications / Absolute maximum rati Hamamatsu Corporation diode | | |
| 7 | G8423 | InGaAs PIN photodiode Hamamatsu Corporation diode | |
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