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FTW20N50A PDF 데이터시트 ( Data , Function )

부품번호 FTW20N50A 기능
기능 N-Channel MOSFET
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FTW20N50A 데이터시트, 핀배열, 회로
FTW20N50A
General Description˖
FTW20N50A, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard..
Features˖
z Fast Switching
z Low ON Resistance(RdsoQİŸ
z Low Gate Charge (Typical Data:130nC)
z Low Reverse transfer capacitances(Typical:65pF)
z 100% Single Pulse avalanche energy Test
Applications˖
Power switch circuit of electron ballast and adaptor.
Absolute˄Tc= 25ć unless otherwise specified˅˖
VDSS
ID
PD (TC=25ć)
RDS(ON)
TO–3P(N)
500
20
230
0.26
V
A
W
Ÿ
Symbol
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJˈTstg
TL
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
Rating
500
20
12
80
f30
950
90
14
4.0
230
1.85
150ˈ–55 to 150
FTP04N 300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/ć
ć
ć
©2009 InPower Semiconductor Co., Ltd.
Page 1 of 10
FTW20N50A REV. A. Jul. 2009




FTW20N50A pdf, 반도체, 판매, 대치품
&KDUDFWHULVWLFV&XUYH˖
100
100­s 10­s
1 ms
10 10 ms
DC
1 OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
TC=25ć Single Pulse
240
180
120
60
0.1
1 10 100 1000
Vds , Drain-to-Source Voltage , Volts
Figure 1 Maximun Forward Bias Safe Operating Area
25
20
15
10
5
0
0 25 50 75 100 125 150
TC, Case Temperature , C
Figure 2 Maximun Power Dissipation vs Case Temperature
70
PULSE DURATION=250­s
DUTY FACTOR=0.5%MAX
60 Tc = 25ć
50
VGS=15V
VGS=8V
40 VGS=5.5
30 VGS=5V
20
VGS=4.5
10
0
25 50 75 100 125 150
TC, Case Temperature ˈC
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
0
0
10 20 30 40
Vds , Drain-to-Source Voltage , Volts
Figure 4 Typical Output Characteristics
50
50%
0.1
10%
20%
5%
0.01
2%
PDM
t1
t2
Single pulse
0.001
0.00001
1% NOTES˖
DUTY FACTOR ˖D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
1
10
©2009 InPower Semiconductor Co., Ltd.
Page 4 of 10
FTW20N50A REV. A. Jul. 2009

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FTW20N50A 전자부품, 판매, 대치품
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©2009 InPower Semiconductor Co., Ltd.
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FTW20N50A REV. A. Jul. 2009

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FTW20N50A

N-Channel MOSFET

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