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PDF CSD16406Q3 Data sheet ( Hoja de datos )
| Número de pieza | CSD16406Q3 | |
| Descripción | NexFET Power MOSFETs | |
| Fabricantes | CICLON | |
| Logotipo |  |
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N-Channel
CICLON NexFET™ Power MOSFETs
CSD16406Q3
Features
• Ultra Low Qg & Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
G
S
S
S
D
D
D
D
S1
S2
S3
G4
D
8D
7D
6D
5D
• RoHS Compliant
• Halogen Free
QFN 3.3mm x 3.3mm Plastic Package Top View
Product Summary
VDS
Qg
Qgd
RDS(on)
Vth
25
5.8
1.5
VGS=4.5V
VGS=10V
1.7
5.9
4.2
V
nC
nC
mΩ
mΩ
V
Maximum Values (TA=25oC unless otherwise stated)
Symbol
VDS
Drain to Source Voltage
Parameter
VGS Gate to Source Voltage
Continuous Drain Current, TC = 25°C
ID
Continuous Drain Current1
IDM Pulsed Drain Current, TA = 25°C2
PD Power Dissipation1
TJ, TSTG
Operating Junction and Storage Temperature Range
EAS Avalanche Energy, single pulse ID =45A, L = 0.1mH, RG = 25Ω
1. Rθja = 460C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB.
2. Pulse width ≤300 µs, duty cycle ≤ 2%
Value
25
+16 / -12
60
19
114
2.7
-55 to 150
101
Units
V
V
A
A
A
W
°C
mJ
RDS(ON) vs. VGS
Gate Charge
20 12
18
ID = 20A
VDS = 12.5V
16 10 ID = 20A
14
12
TC = 125ºC
8
TC = 25ºC
10 6
8
4
6
42
2
0
0 2 4 6 8 10 12
VGS - Gate to Source Voltage (V)
0
0 2 4 6 8 10 12 14
Qg - Gate Charge (nC)
Ordering Information
Type
CSD16406Q3
Package
QFN 3.3 X 3.3 Plastic Package
© 2008 CICLON Semiconductor Device Corp., rev 2.2
All rights reserved.
Package Media
13 inch reel
Qty
2500
Ship
Tape and Reel
www.ciclonsemi.com
1 page  
N-Channel
CICLON NexFET™ Power MOSFETs
CSD16406Q3
Typical MOSFET Characteristics (TA = 25oC unless otherwise stated)
1.6
1.4
ID = 20A
VGS = 10V
1.2
1
100
10 TC = 125ºC
TC = 25ºC
1
0.8 0.1
0.6
0.01
0.4
0.001
0.2
0
-75
-25 25
75
TC - Case tem perature (°C)
125
0.0001
175 0
0.2 0.4 0.6 0.8
VSD - Source to Drain Voltage (V)
1
Figure 8: On Resistance vs. Temperature
Figure 9: Typical Diode Forward Voltage
1000
1000
1.2
100 100us
10
1ms
1 Area limited
by RDS(ON)
0.1 Single pulse
RthJA=1300C/W (min Cu)
0.01
0.01
0.1 1
VDS - Drain Voltage (V)
10
10ms
100ms
1s
DC
100
Figure 10: Maximum Safe Operating Area
70
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150 175
TC - Case tem perature (°C)
Figure 12: Maximum Drain Current vs. Temperature
© 2008 CICLON Semiconductor Device Corp., rev 2.2
All rights reserved.
100 TC = 25ºC
TC = 125ºC
10
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
tAV - Tim e in Avalanche (S)
1.00E-01
Figure 11: Single Pulse Unclamped Inductive
Switching
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet CSD16406Q3.PDF ] | |
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