|
|
PDF CSD16403Q5A Data sheet ( Hoja de datos )
| Número de pieza | CSD16403Q5A | |
| Descripción | NexFET Power MOSFETs | |
| Fabricantes | CICLON | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CSD16403Q5A (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
N-Channel
CICLON NexFET™ Power MOSFETs
CSD16403Q5A
Features
• Ultra Low Qg & Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
G
S
S
S
D
D
D
D
S1
S2
S3
G4
D
8D
7D
6D
5D
• RoHS Compliant
• Halogen Free
QFN 5mm x 6mm Plastic Package
Top View
Product Summary
VDS
Qg
Qgd
RDS(on)
Vth
25
13.3
3.5
VGS=4.5V
VGS=10V
1.6
2.9
2.2
V
nC
nC
mΩ
mΩ
V
Maximum Values (TA = 25oC unless otherwise stated)
Symbol
VDS
Drain to Source Voltage
Parameter
VGS Gate to Source Voltage
Continuous Drain Current, TC = 25°C
ID
Continuous Drain Current1
IDM Pulsed Drain Current, TA = 25°C2
PD Power Dissipation1
TJ, TSTG
Operating Junction and Storage Temperature Range
EAS Avalanche Energy, single pulse ID =67A, L = 0.1mH, RG = 25Ω
1. Rθja = 410C/W on 1in2 Cu FR4 PCB.
2. Pulse width ≤300 µs, duty cycle ≤ 2%
RDS(ON) vs. VGS
10.0
8.0
ID = 20A
Gate Charge
12
VDS = 12.5V
10 ID = 20A
TC = 125ºC
8
6.0 TC = 25ºC
6
4.0
4
2.0 2
Value
25
+16 / -12
100
28
184
3.1
-55 to 150
224
Units
V
V
A
A
A
W
°C
mJ
0.0
0
2 4 6 8 10
VGS - Gate to Source Voltage (V)
Ordering Information
12
Type
CSD16403Q5A
Package
QFN 5X6 Plastic Package
© 2008 CICLON Semiconductor Device Corp., rev 2.4
All rights reserved.
0
0 3 6 9 12 15 18 21 24 27 30 33
Qg - Gate Charge (nC)
Package Media
13 inch reel
Qty
2500
Ship
Tape and Reel
www.ciclonsemi.com
1 page  
N-Channel
CICLON NexFET™ Power MOSFETs
CSD16403Q5A
Typical MOSFET Characteristics (TA = 25oC unless otherwise stated)
1.6
ID = 20A
1.4 VGS = 10V
100
TC = 125º C
10 TC = 25º C
1
1.2
0.1
1.0
0.01
0.8
0.001
0.6
-75
-25 25 75
TC - Case tem perature (°C)
125
Figure 8: On Resistance vs. Temperature
1000
175
0.0001
0
0.2 0.4 0.6 0.8
1
VSD - Source to Drain Voltage (V)
Figure 9: Typical Diode Forward Voltage
1000
1.2
100
100us
10
1
0.1
0.01
0.01
Area limited
by RDS(ON)
Single pulse
RthJA=940C/W (min Cu)
0.1 1
VDS - Drain Voltage (V)
10
1ms
10ms
100ms
DC
100
Figure 10: Maximum Safe Operating Area
120
100
80
60
40
20
0
-50
0 50 100 150
TC - Case tem perature (°C)
200
Figure 12: Maximum Drain Current vs. Temperature
© 2008 CICLON Semiconductor Device Corp., rev 2.4
All rights reserved.
TC = 25º C
100 TC = 125ºC
10
1
0.00001
0.0001
0.001
0.01
tAV - Tim e in Avalanche (S)
0.1
Figure 11: Single Pulse Unclamped Inductive
Switching
www.ciclonsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet CSD16403Q5A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CSD16403Q5A | NexFET Power MOSFETs | CICLON |
| CSD16403Q5A | CICLON NexFET Power MOSFETs (Rev. A) |  Texas Instruments |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |