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PDF CSD16414Q5 Data sheet ( Hoja de datos )
| Número de pieza | CSD16414Q5 | |
| Descripción | NexFET Power MOSFETs | |
| Fabricantes | CICLON | |
| Logotipo |  |
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N-Channel
CICLON NexFET™ Power MOSFETs
CSD16414Q5
Features
Ultra Low Qg & Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
G
S
S
S
D
D
D
D
S1
S2
S3
G4
D
8D
7D
6D
5D
RoHS Compliant
Halogen Free
QFN 5mm x 6mm Plastic Package
Top View
Product Summary
VDS
Qg
Qgd
RDS(on)
Vth
25
16.6
4.4
VGS=4.5V
VGS=10V
1.6
2.1
1.5
V
nC
nC
m
m
V
Maximum Values (TA=25oC unless otherwise stated)
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Continuous Drain Current, TC = 25°C
Continuous Drain Current1
IDM Pulsed Drain Current, TA = 25°C2
PD Power Dissipation1
TJ, TSTG
Operating Junction and Storage Temperature Range
EAS Avalanche Energy, single pulse ID =100A, L = 0.1mH, RG = 25Ω
1. RθJA = 390C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB.
2. See Figure 10
RDS(ON) vs. VGS
6.0
5.0
ID = 30A
Gate Charge
12
VDS = 12.5V
10 ID = 30A
4.0 8
TC = 125ºC
3.0
TC = 25ºC
6
2.0 4
Value
25
+16 / -12
100
34
213
3.2
-55 to 150
500
Units
V
V
A
A
A
W
°C
mJ
1.0 2
0.0
0
2 4 6 8 10
VGS - Gate to Source Voltage (V)
12
Ordering Information
Type
CSD16414Q5
Package
QFN 5X6 Plastic Package
© 2009 CICLON Semiconductor Device Corp., rev 2.1
All rights reserved.
0
0 5 10 15 20 25 30 35 40
Qg - Gate Charge (nC)
Package Media
13 inch reel
Qty
2500
Ship
Tape and Reel
www.ciclonsemi.com
1 page  
N-Channel
CICLON NexFET™ Power MOSFETs
CSD16414Q5
Typical MOSFET Characteristics (TA = 25oC unless otherwise stated)
1.6
1.4
ID = 30A
VGS = 10V
1.2
1.0
100
10 TC = 125ºC
TC = 25º C
1
0.8 0.1
0.6
0.01
0.4
0.2 0.001
0.0
-75
-25 25
75
TC - Case tem perature (°C)
125
Figure 8: On Resistance vs. Temperature
175
0.0001
0.0
0.2 0.4 0.6 0.8
VSD - Source to Drain Voltage (V)
Figure 9: Typical Diode Forward Voltage
1.0
1000
1000
100
10
1 Area limited
by RDS(ON)
0.1 Single pulse
RthJA=390C/W (max Cu)
0.01
0.01
0.1 1
VDS - Drain Voltage (V)
10
1ms
10ms
100ms
1s
DC
100
100
TC = 25º C
TC = 125º C
10
1
0.00001
0.0001
0.001
0.01
tAV - Tim e in Avalanche (S)
0.1
Figure 10: Maximum Safe Operating Area
Figure 11: Single Pulse Unclamped Inductive
Switching
120
100
80
60
40
20
0
-50
-25
0 25 50 75 100 125 150 175
TC - Case Tem perature (oC)
Figure 12: Maximum Drain Current vs. Temperature
© 2009 CICLON Semiconductor Device Corp., rev 2.1
All rights reserved.
www.ciclonsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet CSD16414Q5.PDF ] | |
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