(PDF) MMIS60R580P Datasheet - N-channel MOSFET

Número de pieza	MMIS60R580P
Descripción	N-channel MOSFET
Fabricantes	MagnaChip
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No Preview Available ! MMIS60R580P Datasheet MMIS60R580P 600V 0.58Ω N-channel MOSFET  Description MMIS60R580P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.58 3 8 18 Unit V Ω V A nC  Package & Internal Circuit D G D S G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code Marking MMIS60R580PTH 60R580P Temp. Range -55 ~ 150℃ Package TO-251-VS (IPAK-VS) Mar. 2016 Revision 1.1 1 Packing Tube RoHS Status Halogen Free MagnaChip Semiconductor Ltd. 1 page  Characteristic Graph MMIS60R580P Datasheet Mar. 2016 Revision 1.1 5 MagnaChip Semiconductor Ltd. 5 Page

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PDF MMIS60R580P Data sheet ( Hoja de datos )