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부품번호 | SST11CP15E 기능 |
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기능 | 4.9-5.9 GHz High-Linearity Power Amplifier | ||
제조업체 | Microchip | ||
로고 | |||
전체 17 페이지수
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Data Sheet
The SST11CP15E is a versatile power amplifier designed for 802.11a/n/ac
embedded applications and is based on the highly-reliable InGaP/GaAs HBT
technology. It is easily configured for high-linearity, high-efficiency applications
over a wide temperature range while operating over the 4.9-5.9 GHz frequency
band. The SST11CP15E has excellent linearity while meeting 802.11a spectrum
mask at 23 dBm with a 3.3V power supply, and at 24.5 dBm with a 5.0V supply.
It provides up to 18 dm, at 3% EVM with 802.11a 54 Mbps, and up to 16 dBm, at
1.8% EVM with 802.11ac 351 Mbps Modulation and 3.3V bias. The power ampli-
fier requires only a 4mA reference current for on/off control. It includes a VSWR/
temperature insensitive, linear power detector. The SST11CP15E is offered in a
12-contact UQFN package.
Features
• Small package size
– 12-contact UQFN (2mm x 2mm x 0.6mm max thick-
ness)
• Wide operating voltage range
– VCC = 3.0–5.0V
• High linear output power, 802.11a/n/ac:
– Spectrum mask compliant using 802.11a OFDM
- Up to 24 dBm at 5.0V
- Up to 22 dBm at 3.3V
– Spectrum mask compliant using 802.11n MCS7, 40 MHz
- Up to 22 dBm at 5.0V
- Up to 19 dBm at 3.3V
– ~3% EVM across 5.1-5.9 GHz for 54 Mbps 802.11a
- Up to 20 dBm at 5.0V VCC
- Up to 18 dBm at 3.3V VCC
– 1.8% EVM across 5.1-5.9 GHz for 351 Mbps 802.11ac
- Up to 16 dBm at 3.3V VCC
• High power-added efficiency/low operating current
for 54 Mbps 802.11a applications
– ~10% @ POUT = 19 dBm for 54 Mbps, 3.3V VCC
• Gain:
– Typically >26 dB gain across broadband
4.9-5.9 GHz, 3.3V VCC
• Low idle current
– ~140 mA ICQ, 3.3 V VCC
• High speed power-up/-down
– Turn on/off time (10%~90%) <100 ns
• Low shut-down current (<1 µA)
• On-chip power detector with -20 dB linear dynamic
range
– Temperature Stable
– VSWR insensitive
• 50Ω on-chip input match and simple output match
• Packages available
– 12-pin QFN 2mm x 2mm x 0.55mm
• All lead-free devices are RoHS compliant
Applications
• WLAN (IEEE 802.11a/n/ac)
• Japan WLAN
• HyperLAN2
• Multimedia
• WiMax
©2013 Silicon Storage Technology, Inc.
www.microchip.com
DS70005025C
05/13
Pin Assignments
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Data Sheet
12 11 10
RFIN 1
VCCb 2
VREF1 3
Top View
(Contacts facing down)
RF and DC GND
0
9 GND
8 RFOUT
7 NC
4 56
Figure 2: Pin Assignments for 12-contact UQFN
75025 P1.0
©2013 Silicon Storage Technology, Inc.
4
DS70005025C
05/13
4페이지 4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Data Sheet
Table 4: AC Electrical Characteristics for Configuration
Parameter Condition
Min Typ Max Unit
FL-U Frequency range
4.9 5.9 GHz
Linear Power
Output power at 3% EVM with 802.11a, 54 Mbps OFDM signal
VCC = 3.3V
VCC3 = 5.0V, VCC1,2 = 3.3V
Output power at 3% EVM with MCS7 40 MHz 11n signal
VCC = 3.3V
17.5
19.5
17
dBm
dBm
dBm
VCC3 = 5.0V, VCC1,2 = 3.3V
Output power at 1.8% EVM, 11ac signal 351 Mbps
VCC = 3.3V
Output power level with 802.11a mask compliance
VCC = 3.3V
19 dBm
16 dBm
22 dBm
ACPR
VCC3 = 5.0V, VCC1,2 = 3.3V
Output power level with 802.11n mask compliance
VCC = 3.3V
VCC3 = 5.0V, VCC1,2 = 3.3V
24 dBm
19 dBm
22 dBm
Gain
Power gain from 4.9–5.9 GHz
VCC = 3.3V
VCC3 = 5.0V, VCC1,2 = 3.3V
27 dB
23 dB
T4.1 75025
©2013 Silicon Storage Technology, Inc.
7
DS70005025C
05/13
7페이지 | |||
구 성 | 총 17 페이지수 | ||
다운로드 | [ SST11CP15E.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SST11CP15 | 4.9-5.8 GHz High-Linearity Power Amplifier | Silicon Storage Technology |
SST11CP15E | 4.9-5.9 GHz High-Linearity Power Amplifier | Microchip |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |