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PDF GA200SA60U Data sheet ( Hoja de datos )
| Número de pieza | GA200SA60U | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD -50066A
INSULATED GATE BIPOLAR TRANSISTOR
GA200SA60U
Ultra-FastTM Speed IGBT
Features
• UltraFast: Optimized for minimum saturation voltage
and operating frequencies up to 40 kHz in hard
switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package ( 2,500 Volt AC/RMS)
• Very low internal inductance ( ≤ 5 nH typ.)
• Industry standard outline
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.60V
@VGE = 15V, IC = 100A
Benefits
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
• Lower overall losses available at frequencies ≥ 20kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load CurrentR
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
S O T -2 2 7
Max.
600
200
100
400
400
± 20
160
2500
500
200
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
Units
V
A
V
mJ
V
W
°C
Thermal Resistance
RθJC
RθCS
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
–––
0.05
30
Max.
0.25
–––
–––
Units
°C/W
gm
1
4/24/2000
1 page  
30000
25000
20000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
15000
10000
5000
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
60 VCC = 480V
VGE = 15V
50
TJ
IC
= 25 °C
= 200A
40
30
20
10
0
0 10 20 30 40 50 60
RGRG, G, GaateteRReessisisttaannccee ((OΩ)hm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
GA200SA60U
20
VCC = 400V
I C = 110A
16
12
8
4
0
0 200 400 600 800
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100 RG = O2.h0mΩ
VGE = 15V
VCC = 480V
10
IICC == 430500AA
IC = 200 A
IC = 100 A
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet GA200SA60U.PDF ] | |
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