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NTMFS4955NT1G 데이터시트 PDF




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부품번호 NTMFS4955NT1G 기능
기능 Power MOSFET ( Transistor )
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NTMFS4955NT1G 데이터시트, 핀배열, 회로
NTMFS4955N
Power MOSFET
30 V, 48 A, Single NChannel, SO8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Optimized for 5 V, 12 V Gate Drives
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C
TA = 100°C
TA = 25°C
TA = 25°C
TA = 100°C
VDSS
VGS
ID
PD
ID
30
±20
16.7
10.5
2.70
25.2
15.9
V
V
A
W
A
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
6.16 W
9.7 A
6.2
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =100°C
PD
ID
0.92 W
48 A
30
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
PD
IDM
23.2 W
210 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 26 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
100
55 to
+150
21
6.0
34
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2013
December, 2013 Rev. 7
1
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
5.6 mW @ 10 V
8.5 mW @ 4.5 V
D (5,6)
ID MAX
48 A
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4955N
AYWZZ
D
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4955NT1G
Package
SO8 FL
(PbFree)
Shipping
1500 /
Tape & Reel
NTMFS4955NT3G SO8 FL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4955N/D




NTMFS4955NT1G pdf, 반도체, 판매, 대치품
NTMFS4955N
TYPICAL CHARACTERISTICS
120
110
10 V
100
90
80
70
60
50
40
30
20
10
0
0
4.5 V
TJ = 25°C
123
4.0 V
3.5 V
3.0 V
VGS = 2.5 V
45
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
120
110
100
90
80
70
60
50
40
30
20
10
0
1
VDS = 10 V
TJ = 55°C
TJ = 25°C
TJ = 125°C
23 4
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
5
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
3
ID = 30 A
456789
VGS (V)
Figure 3. OnResistance vs. VGS
1.7
1.6 ID = 30 A
1.5 VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50 25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
0.011
0.010 T = 25°C
0.009
0.008
0.007
VGS = 4.5 V
0.006
0.005
0.004
VGS = 10 V
0.003
10 10 20 30 40 50 60 70 80 90 100 110 120
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
10,000
TJ = 150°C
1,000
TJ = 125°C
100 TJ = 85°C
10
150 5
10 15
VGS = 0 V
20 25
30
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
http://onsemi.com
4

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NTMFS4955NT1G 전자부품, 판매, 대치품
NTMFS4955N
PACKAGE DIMENSIONS
D
2
D1
2X
0.20 C
A
B 2X
E1
2E
1 2 34
TOP VIEW
0.10 C
0.10 C
SIDE VIEW
A
DETAIL A
8X b
0.10 C A B
0.05 c L
1
e/2
4
K
DFN5 5x6, 1.27P
(SO8FL)
CASE 488AA
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20
c
C
4X
q
A1
3X
e
DETAIL A
C
SEATING
PLANE
MILLIMETERS
DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00
−−− 0.05
b 0.33 0.41 0.51
c 0.23 0.28 0.33
D 5.15 BSC
D1 4.70 4.90 5.10
D2 3.80 4.00 4.20
E 6.15 BSC
E1 5.70 5.90 6.10
E2 3.45 3.65 3.85
e 1.27 BSC
G 0.51 0.61 0.71
K 1.20 1.35 1.50
L 0.51 0.61 0.71
L1 0.05 0.17 0.20
M 3.00 3.40 3.80
q 0 _ −−− 12 _
STYLE 1:
PIN 1. SOURCE
2. SOURCE
SOLDERING FOOTPRINT*
3. SOURCE
4. GATE
5. DRAIN
3X 4X
1.270
0.750
4X
1.000
0.965
E2
PIN 5
(EXPOSED PAD)
L1 M
G D2
BOTTOM VIEW
1.330
2X
0.495
3.200
0.29X05
4.530
0.475
2X
1.530
4.560
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81358171050
http://onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTMFS4955N/D

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NTMFS4955NT1G

Power MOSFET ( Transistor )

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