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PDF MCRF202 Data sheet ( Hoja de datos )
| Número de pieza | MCRF202 | |
| Descripción | 125 kHz Passive RFID Device | |
| Fabricantes | Microchip Technology | |
| Logotipo |  |
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MCRF202
125 kHz Passive RFID Device with Sensor Input
Features
• External sensor input
• Data polarity changes with sensor input condition
• Read-only data transmission
• 96- or 128-bits of factory programming user
memory (also supports 48- and 64-bit protocols)
• Operates up to 400 kHz carrier frequency
• Low-power operation
• Modulation options:
- ASK, FSK, PSK
• Data Encoding options:
- NRZ Direct, Differential Biphase Manchester
Biphase
• Die, Wafer, PDIP or SOIC package option
• Factory programming and device serialization
Applications
• Insect control
• Industrial tagging
Reader
RF
Signal
Data
External
MCRF202 Sensor
Switch
Package Type
PDIP/SOIC
VA
NC
TEST
SENSOR
1
2
3
4
8 VB
7 NC
6 VSS
5 VCC
Description
The MCRF202 is a passive Radio Frequency Identifi-
cation (RFID) device that provides an RF interface for
reading the contents of a user memory array. This
device is specially designed to detect the logic state of
an external sensor, and alters its data transmissions,
based on the condition of the sensor input. The device
outputs a normal bit data stream if the sensor input has
a logic ‘1’ state, but outputs an inverted data stream for
a logic ‘0’ state. In this way, the reader can monitor the
state (condition) of the external sensor input by
detecting whether the data from the device is a normal
or inverted data stream.
The device is powered by rectifying the incoming RF
carrier signal that is transmitted from the reader. When
the device develops sufficient DC voltage, it transmits
the contents of its memory array by modulating the
incoming RF carrier signal. The reader is able to detect
the modulation and decodes the data being transmit-
ted. Code length, modulation option, encoding option,
and bit rate are set at the factory to fit the needs of
particular applications.
The MCRF202 is available in die, wafer, PDIP and
SOIC packages. The encoding, modulation, bit rate
options, and data fields are specified by the customer
and programmed by Microchip Technology Inc. prior to
shipment. See Technical Bulletin TB023 for more
information on factory serialization (SQTP™).
2003 Microchip Technology Inc.
DS21308E-page 1
1 page  
MCRF202
2.2 Configuration Register and
Control Logic
The configuration register determines the operational
parameters of the device. It directly controls logic
blocks which generate the baud rate, memory size,
encoded data, modulation protocol, etc. CB11 is
always a zero. Once the array is successfully pro-
grammed at the factory, the lock bit CB12 is set. When
the lock bit is set, programming and erasing the device
becomes permanently disabled. Table 2-1 contains a
description of the control register bit functions.
2.2.1 BAUD RATE TIMING OPTION
The chip will access data at a baud rate determined by
bits CB2, CB3, and CB4 of the configuration register.
For example, MOD32 (CB2 = 0, CB3 = 1, CB4 = 1) has
32 RF cycles per bit. This gives the data rate of 4 kHz
for the RF carrier frequency of 128 kHz.
2.2.2 DATA ENCODING OPTION
This logic acts upon the serial data being read from the
EEPROM. The logic encodes the data according to the
configuration bits CB6 and CB7. CB6 and CB7 deter-
mine the data encoding method. The available choices
are:
• Non-return to zero-level (NRZ_L)
• Biphase_S (Differential)
• Biphase_L (Manchester)
• Inverted Manchester
2.2.3 MODULATION OPTION
CB8 and CB9 determine the modulation protocol of the
encoded data. The available choices are:
• ASK
• FSK
• PSK_1
• PSK_2
When ASK (direct) option is chosen, the encoded data
is fed into the modulation transistor without change.
When FSK option is chosen, the encoded data is rep-
resented by:
a) Sets of 10 RF carrier cycles (first 5 cycles →
higher amplitude, the last 5 cycles → lower
amplitude) for logic “high” level.
b) Sets of 8 RF carrier cycles (first 4 cycles →
higher amplitude, the last 4 cycles → lower
amplitude) for logic “low” level.
For example, FSK signal for MOD40 is represented:
a) 4 sets of 10 RF carrier cycles for data ‘1’.
b) 5 sets of 8 RF carrier cycles for data ‘0’.
Refer to Figure 2-2 for the FSK signal with MOD40
option.
The PSK_1 represents change in the phase of the
modulation signal at the change of the encoded data.
For example, the phase changes when the encoded
data is changed from ‘1’ to ‘0’, or from ‘0’ to ‘1’.
The PSK_2 represents change in the phase at the
change on ‘1’. For example, the phase changes when
the encoded data is changed from ‘0’ to ‘1’, or from ‘1’
to ‘1’.
FIGURE 2-2:
ENCODED DATA AND FSK OUTPUT SIGNAL FOR MOD40 OPTION
Encoded Data ‘1’
5 cycles (HI)
5 cycles (LO)
Encoded Data ‘0’
4 cycles (HI)
4 cycles (LO)
40 RF cycles
40 RF cycles
2003 Microchip Technology Inc.
DS21308E-page 5
5 Page 
4.0 FAILED DIE IDENTIFICATION
Every die on the wafer is electrically tested according
to the data sheet specifications and visually inspected
to detect any mechanical damage such as mechanical
cracks and scratches.
Any failed die in the test or visual inspection is identified
by black colored inking. Therefore, any die covered
with black ink should not be used.
The ink dot specification:
• Ink dot size: minimum 20 µm x 20 µm
• Position: central third of die
• Color: black
5.0 WAFER DELIVERY
DOCUMENTATION
Each wafer container is marked with the following
information:
• Microchip Technology Inc. MP Code
• Lot Number
• Total number of wafer in the container
• Total number of good dice in the container
• Average die per wafer (DPW)
• Scribe number of wafer with number of good dice.
MCRF202
6.0 NOTICE ON DIE AND WAFER
HANDLING
The device is very susceptible to Electrostatic
Discharge (ESD). ESD can cause critical damage to
the device. Special attention is needed during the
handling process.
Any ultraviolet (UV) light can erase the memory cell
contents of an unpackaged device. Fluorescent lights
and sun light can also erase the memory cell although
it takes more time than UV lamps. Therefore, keep any
unpackaged devices out of UV light and also avoid
direct exposure from strong fluorescent lights and sun
light.
Certain integrated circuit (IC) manufacturing, chip-on-
board (COB) and tag assembly operations may use UV
light. Operations such as backgrind, de-tape, certain
cleaning operations, epoxy or glue cure should be done
without exposing the die surface to UV light.
Using x-ray for die inspection will not harm the die, nor
erase memory cell contents.
2003 Microchip Technology Inc.
DS21308E-page 11
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet MCRF202.PDF ] | |
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