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부품번호 | DTC114EM3T5G 기능 |
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기능 | Digital Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 10 페이지수
DTC114EM3T5G Series
Digital Transistors (BRT)
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SOT−723 package which is designed for low power surface mount
applications.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SOT−723 Package can be Soldered using Wave or Reflow.
• Available in 4 mm, 8000 Unit Tape & Reel
• These are Pb−Free Devices
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50 Vdc
Collector-Emitter Voltage
VCEO
50 Vdc
Collector Current
IC 100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
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NPN SILICON DIGITAL
TRANSISTORS
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
3
2
1
SOT−723
CASE 631AA
STYLE 1
MARKING DIAGRAM
xx
xx = Specific Device Code
(See Marking Table on page 2)
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number:
DTC114EM3/D
DTC114EM3T5G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
ON CHARACTERISTICS (Note 4)
Characteristic
Symbol
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) DTC143TM3T5G
DTC143ZM3T5G
DTC114TM3T5G
DTC144TM3T5G
VOH
Input Resistor
DTC114EM3T5G
DTC124EM3T5G
DTC144EM3T5G
DTC114YM3T5G
DTC114TM3T5G
DTC143TM3T5G
DTC123EM3T5G
DTC143EM3T5G
DTC143ZM3T5G
DTC124XM3T5G
DTC123JM3T5G
DTC115EM3T5G
DTC144WM3T5G
DTC144TM3T5G
R1
Resistor Ratio
DTC114EM3T5G/DTC124EM3T5G/
DTC144EM3T5G/DTC115EM3T5G
DTC114YM3T5G
DTC143TM3T5G/DTC114TM3T5G/DTC144TM3T5G
DTC123EM3T5G/DTC143EM3T5G
DTC143ZM3T5G
DTC124XM3T5G
DTC123JM3T5G
DTC144WM3T5G
R1/R2
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
Min
Min
4.9
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
32.9
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
Typ
Typ
−
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
47
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
Max
Max
−
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
61.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
Unit
Unit
Vdc
kW
300
250
200
150
100
50
0−50
RqJA = 480°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
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4
4페이지 DTC114EM3T5G Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTC144EM3T5G
10
IC/IB = 10
1000
1
TA = −25°C
25°C 100
0.1 75°C
VCE = 10 V
TA = 75°C
25°C
−25°C
0.01
0
1
0.8
0.6
0.4
0.2
00
20 40
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
50 10 1
10
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
100
f = 1 MHz
IE = 0 V
TA = 25°C
100 25°C
75°C
10 TA = −25°C
1
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
0.01
0.001
50 0
VO = 5 V
24 6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 15. Output Current versus Input Voltage
100
VO = 0.2 V
10
TA = −25°C
25°C
75°C
1
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 16. Input Voltage versus Output Current
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |