DTC115EM3T5G Datasheet PDF - ON Semiconductor
| Part Number | DTC115EM3T5G | |
| Description | Digital Transistors | |
| Manufacturers | ON Semiconductor | |
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DTC114EM3T5G Series
Digital Transistors (BRT)
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SOT−723 package which is designed for low power surface mount
applications.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SOT−723 Package can be Soldered using Wave or Reflow.
• Available in 4 mm, 8000 Unit Tape & Reel
• These are Pb−Free Devices
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50 Vdc
Collector-Emitter Voltage
VCEO
50 Vdc
Collector Current
IC 100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
NPN SILICON DIGITAL
TRANSISTORS
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
3
2
1
SOT−723
CASE 631AA
STYLE 1
MARKING DIAGRAM
xx
xx = Specific Device Code
(See Marking Table on page 2)
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number:
DTC114EM3/D
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1
IC/IB = 10
0.1
0.01
DTC114EM3T5G Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTC114EM3T5G
TA = −25°C
25°C
1000
75°C
100
VCE = 10 V
TA = 75°C
25°C
−25°C
0.001
0
4
3
2
1
00
20 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
10
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
f = 1 MHz
IE = 0 V
TA = 25°C
100
75°C
10
25°C
TA = −25°C
1
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
0.01
VO = 5 V
50
0.001
0
1
23
4
5
6
7
8
9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
10
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
http://onsemi.com
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