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PDF 2SA950 Data sheet ( Hoja de datos )
| Número de pieza | 2SA950 | |
| Descripción | PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | DC COMPONENTS | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SA950
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low-frequency power amplifier
applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
-35
-30
-5
-800
600
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO -35
Collector-Emitter Breakdown Voltage
BVCEO -30
Emitter-Base Breakdown Volatge
BVEBO
-5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
VBE(sat)
-
-
-
DC Current Gain(1)
hFE1
hFE2
45
100
hFE3
40
Transition Frequency
fT -
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
-
-
-
-
-0.28
-
-
-
-
120
19
Max
-
-
-
-0.1
-0.1
-0.7
-1.3
-
320
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IC=-2mA, IB=0
IE=-100µA, IC=0
VCB=-35V, IE=0
VEB=-5V, IC=0
IC=-500mA, IB=-20mA
IC=-500mA, IB=-20mA
IC=-5mA, VCE=-1V
IC=-100mA, VCE=-1V
IC=-500mA, VCE=-1V
IC=-10mA, VCE=-5V
VCE=-10V, f=1MHz, IE=0
Classification of hFE2
Rank
O
Y
Range
100~200
160~320
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