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부품번호 | JCS2N60V 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | JILIN SINO-MICROELECTRONICS | ||
로고 | |||
N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS2N60
主要参数 MAIN CHARACTERISTICS
ID 2.0 A
VDSS 600 V
Rdson(@Vgs=10V) 5 Ω
Qg 15.3 nC
封装 Package
用途
高频开关电源
电子镇流器
LED 电源
APPLICATIONS
High frequency switching
mode power supply
Electronic ballast
LED power supply
产品特性
低栅极电荷
低CrssB B (典型值 7.6pF)
开关速度快
产品全部经过雪崩测试
高抗 dv/dt 能力
RoHS 产品
FEATURES
Low gate charge
Low CrssB B (typical 7.6pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
封装
Package
无卤素
Halogen Free
JCS2N60V-O-V-N-B
JCS2N60R-O-R-N-B
JCS2N60R-O-R-N-A
JCS2N60C-O-C-N-B
JCS2N60F-O-F-N-B
JCS2N60V-R-V-N-B
JCS2N60V
JCS2N60R
JCS2N60R
JCS2N60C
JCS2N60F
JCS2N60V
IPAK
DPAK
DPAK
TO-220C
TO-220MF
IPAK
否
否
否
否
否
是
NO
NO
NO
NO
NO
YES
包装
Packaging
条管 Tube
条管 Tube
编带 Reel
条管 Tube
条管 Tube
条管 Tube
器件重量
Device
Weight
0.35 g(typ)
0.30 g(typ)
0.30 g(typ)
2.15 g(typ)
2.20 g(typ)
0.35 g(typ)
版本:201501F
1/12
R
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
tBdB(on)
trB B
VBDDB=300V,IBDB=2.0A,RBGB=25Ω
(note 4,5)
延迟时间 Turn-Off delay time
tBdB(off)
下降时间 Turn-Off Fall time
tfB B
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
QgB B
QgsB B
QgdB B
VDSB B =480V ,
IBDB=2.0A
VGSB B =10V (note 4,5)
JCS2N60
- 16 40 ns
- 50 110 ns
- 40 90 ns
- 40 90 ns
- 15.3 19 nC
- 1.8 - nC
- 7.2 - nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
ISB B - - 2.0 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISMB B - - 6.0 A
正向压降
Drain-Source Diode Forward
VSDB B
VBGSB=0V,
IBSB=2.0A
Voltage
- - 1.4 V
反向恢复时间
Reverse recovery time
trrB B
反向恢复电荷
Reverse recovery charge
QrrB B
热特性 THERMAL CHARACTERISTIC
VBGSB=0V, IBSB=2.0A
dIBFB/dt=100A/μs (note 4)
- 250 - ns
- 1.31 - μC
项目
Parameter
最大
符号
Max
Symbol
JCS2N60V/R JCS2N60C
单位
Unit
JCS2N60F
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
2.87
2.32
5.50 ℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient Rth(j-A)
110
62.5 62.5 ℃/W
注释:
1:脉冲宽度由最高结温限制
2:L=55mH, IBASB=2.0A, VBDDB=50V, RBGB=25 Ω,起始结
温TBJB=25℃
3:ISDB B ≤2A,di/dt ≤300A/μs,VDD≤BVBDSSB,起始结温
TBJB=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1:Pulse width limited by maximum junction
temperature
2:L=55mH, IBASB=2.0A, VBDDB=50V, RBGB=25 Ω,Starting
TBJB=25℃
3:ISDB B ≤2A,di/dt ≤300A/μs,VDD≤BVBDSSB, Starting TBJB=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201501F
4/12
4페이지 R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS2N60V/R
JCS2N60
Transient Thermal Response Curve
For JCS2N60C
Transient Thermal Response Curve
For JCS2N60F
版本:201501F
7/12
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ JCS2N60V.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
JCS2N60 | N-channel enhancement mode Field-Effect Transistor | ETC |
JCS2N60 | N-channel enhancement mode Field-Effect Transistor | ETC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |