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부품번호 | JCS2N60T 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | JILIN SINO-MICROELECTRONICS | ||
로고 | |||
R JCS2N60C
JCS2N60C
主要参数 MAIN CHARACTERISTICS
ID 2.0 A
VDSS 600 V
Rdson(Vgs=10V) 4.5 Ω
Qg 8 nC
封装 Package
用途
高频开关电源
电子镇流器
LED 电源
产品特性
低栅极电荷
低Crss (典型值 3.8pF)
开关速度快
产品全部经过雪崩测试
高抗 dv/dt 能力
RoHS 产品
APPLICATIONS
High efficiency switch
mode power supplies
Electronic lamp ballasts
based on half bridge
LED power supplie
FEATURES
Low gate charge
Low Crss (typical 3.8pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
JCS2N60TC-O-T-N-B
JCS2N60VC-O-V-N-B
JCS2N60RC-O-R-N-B
JCS2N60CC-O-C-N-B
JCS2N60FC-O-F-N-B
JCS2N60FC-O-F2-N
-B
JCS2N60T
JCS2N60V
JCS2N60R
JCS2N60C
JCS2N60F
JCS2N60F
封装
Package
TO-92
IPAK
DPAK
TO-220C
TO-220MF
TO-220MF
-K2
无卤素
包
装
Halogen Free Packaging
否 NO
否 NO
否 NO
否 NO
否 NO
否 NO
编带 Brede
条管 Tube
条管 Tube
条管 Tube
条管 Tube
条管 Tube
器件重量
Device
Weight
0.22 g(typ)
0.35 g(typ)
0.30 g(typ)
2.15 g(typ)
2.20 g(typ)
2.20 g(typ)
版本:201502D
1/15
R JCS2N60C
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
td(on)
tr
VDD=300V,ID=2.0A,RG=25Ω - 9 25 ns
(note 4,5)
- 30 48 ns
延迟时间 Turn-Off delay time
td(off)
- 27 46 ns
下降时间 Turn-Off Fall time
tf
- 32 49 ns
栅极电荷总量 Total Gate Charge Qg
VDS =480V ,
- 8 10 nC
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
Qgs
Qgd
ID=2.0A
VGS=10V (note 4,5)
- 1.3 -
- 4.3 -
nC
nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS - - 1.9 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM - - 6.0 A
正向压降
Drain-Source Diode Forward VSD VGS=0V, IS=2.0A
Voltage
- - 1.4 V
反向恢复时间
Reverse recovery time
trr
反向恢复电荷
Reverse recovery charge
Qrr
热特性 THERMAL CHARACTERISTIC
VGS=0V, IS=2.0A
dIF/dt=100A/μs (note 4)
- 220 - ns
- 1.0 - μC
最大
项目
符号
Max 单 位
Parameter
Symbol JCS2N60 JCS2N60 JCS2N60 JCS2N60 Unit
VC/RC TC FC CC
结到管壳的热阻
Thermal Resistance, Junction to Case Rth(j-c)
2.87
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5.5 2.32 ℃/W
结到环境的热阻
Thermal Resistance, Junction to
Ambient
Rth(j-A)
110
120
62.5 ℃/W
注释:
1:脉冲宽度由最高结温限制
2:L=56mH, IAS=2.0A, VDD=50V, RG=25 Ω,起始结
温TJ=25℃
3:ISD ≤2A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1:Pulse width limited by maximum junction temperature
2:L=56mH, IAS=2.0A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3:ISD ≤2A,di/dt ≤300A/μs,VDD≤BVDSS, Starting TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201502D
4/15
4페이지 R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS2N60VC/RC
JCS2N60C
Transient Thermal Response Curve
For JCS2N60CC
Transient Thermal Response Curve
For JCS2N60FC
版本:201502D
7/15
7페이지 | |||
구 성 | 총 15 페이지수 | ||
다운로드 | [ JCS2N60T.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
JCS2N60 | N-channel enhancement mode Field-Effect Transistor | ETC |
JCS2N60 | N-channel enhancement mode Field-Effect Transistor | ETC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |