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부품번호 | IPU50R1K4CE 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 14 페이지수
IPD50R1K4CE,IPU50R1K4CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
DPAK
tab
2
1
3
IPAK
tab
12 3
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
1.4
Ω
ID 4.8 A
Qg.typ
8.2
nC
ID,pulse
8.8
A
Eoss@400V
0.79
µJ
Type/OrderingCode
IPD50R1K4CE
IPU50R1K4CE
Package
PG-TO 252
PG-TO 251
Marking
50S1K4CE
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.4,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R1K4CE,IPU50R1K4CE
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage curent
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Min.
500
2.50
-
-
-
-
-
-
Values
Typ. Max.
--
3 3.50
-1
10 -
- 100
1.26 1.40
3.28 -
7-
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=0.07mA
µA
VDS=500V,VGS=0V,Tj=25°C
VDS=500V,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
Ω
VGS=13V,ID=0.9A,Tj=25°C
VGS=13V,ID=0.9A,Tj=150°C
Ω f=1MHz,opendrain
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related1)
Effective output capacitance, time
related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
Values
Typ. Max.
178 -
11 -
10 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...400V
- 36 - pF ID=constant,VGS=0V,VDS=0...400V
-
6.5 -
ns
VDD=400V,VGS=13V,ID=1.1A,
RG=5.3Ω
-
6-
ns
VDD=400V,VGS=13V,ID=1.1A,
RG=5.3Ω
-
23 -
ns
VDD=400V,VGS=13V,ID=1.1A,
RG=5.3Ω
-
30 -
ns
VDD=400V,VGS=13V,ID=1.1A,
RG=5.3Ω
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
-
-
-
-
Values
Typ. Max.
1-
4.6 -
8.2 -
5.4 -
Unit Note/TestCondition
nC VDD=400V,ID=1.1A,VGS=0to10V
nC VDD=400V,ID=1.1A,VGS=0to10V
nC VDD=400V,ID=1.1A,VGS=0to10V
V VDD=400V,ID=1.1A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
Final Data Sheet
4 Rev.2.4,2016-06-13
4페이지 500VCoolMOSªCEPowerTransistor
IPD50R1K4CE,IPU50R1K4CE
Diagram5:Typ.outputcharacteristicsTj=25°C
12
Diagram6:Typ.outputcharacteristicsTj=125°C
7
10
8
6
4
2
0
0 5 10
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
20 V
10 V
8V
6
5
4
3
7V
2
6V
5.5 V
5V
1
4.5 V
0
15 20 0
5 10
VDS[V]
ID=f(VDS);Tj=125°C;parameter:VGS
20 V
10 V
8V
7V
6V
5.5 V
5V
4.5 V
15 20
Diagram7:Typ.drain-sourceon-stateresistance
5.00
4.80
4.60
4.40
4.20 5 V
6V
7V
4.00
5.5 V
6.5 V
3.80
3.60
3.40
3.20 10 V
3.00
2.80
2.60
2.40
2.20
0
2
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
4
Diagram8:Drain-sourceon-stateresistance
4.0
3.5
3.0
2.5 98%
typ
2.0
1.5
1.0
0.5
0.0
6 -50 -25 0 25 50 75 100 125 150 175
Tj[°C]
RDS(on)=f(Tj);ID=0.9A;VGS=13V
Final Data Sheet
7 Rev.2.4,2016-06-13
7페이지 | |||
구 성 | 총 14 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
IPU50R1K4CE | MOSFET ( Transistor ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |