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PDF IPU50R2K0CE Data sheet ( Hoja de datos )

Número de pieza IPU50R2K0CE
Descripción Power Transistor
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! IPU50R2K0CE Hoja de datos, Descripción, Manual

IPD50R2K0CE,IPU50R2K0CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
DPAK
tab
2
1
3
IPAK
tab
12 3
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
2
ID 3.6 A
Qg.typ
6
nC
ID,pulse
6.1
A
Eoss@400V
0.62
µJ
Type/OrderingCode
IPD50R2K0CE
IPU50R2K0CE
Package
PG-TO 252
PG-TO 251
Marking
50S2K0CE
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.3,2016-06-13

1 page




IPU50R2K0CE pdf
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
Qrr
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.83 -
110 -
0.35 -
5.2 -
Unit Note/TestCondition
V VGS=0V,IF=0.8A,Tf=25°C
ns VR=400V,IF=0.8A,diF/dt=100A/µs
µC VR=400V,IF=0.8A,diF/dt=100A/µs
A VR=400V,IF=0.8A,diF/dt=100A/µs
Final Data Sheet
5 Rev.2.3,2016-06-13

5 Page





IPU50R2K0CE arduino
500VCoolMOSªCEPowerTransistor
IPD50R2K0CE,IPU50R2K0CE
6PackageOutlines
*) mold flash not included
MILLIMETERS
INCHES
DIM
MIN MAX MIN MAX
A
2.16
2.41
0.085
0.095
A1
0.00
0.15
0.000
0.006
b
0.64
0.89
0.025
0.035
b2
0.65
1.15
0.026
0.045
b3
5.00
5.50
0.197
0.217
c
0.46
0.60
0.018
0.024
c2
0.46
0.98
0.018
0.039
D
5.97
6.22
0.235
0.245
D1
5.02
5.84
0.198
0.230
E
6.40
6.73
0.252
0.265
E1
4.70
5.60
0.185
0.220
e 2.29 (BSC)
0.090 (BSC)
e1 4.57 (BSC)
0.180 (BSC)
N3
3
H
9.40
10.48
0.370
0.413
L
1.18
1.70
0.046
0.067
L3
0.90
1.25
0.035
0.049
L4
0.51
1.00
0.020
0.039
F1 10.60
0.417
F2 6.40
0.252
F3 2.20
0.087
F4 5.80
0.228
F5 5.76
0.227
F6 1.20
0.047
Figure1OutlinePG-TO252,dimensionsinmm/inches
DOCUMENT NO.
Z8B00003328
SCALE
0
2.0
0 2.0
4mm
EUROPEAN PROJECTION
ISSUE DATE
01-09-2015
REVISION
05
Final Data Sheet
11 Rev.2.3,2016-06-13

11 Page







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