|
|
|
부품번호 | CQ-209D 기능 |
|
|
기능 | High-Speed Small-Sized Current Sensor | ||
제조업체 | Asahi Kasei Microsystems | ||
로고 | |||
전체 13 페이지수
[CQ-209D]
CQ-209D
High-Speed Small-Sized Current Sensor
Overview
The CQ-209D is an open-type current sensor using a Hall sensor which outputs the analog voltage
proportional to the AC/DC current. Quantum well ultra-thin film InAs (Indium Arsenide) is used as the Hall
sensor, which enables the high-accuracy and high-speed current sensing. Simple AI-Shell package with the
Hall sensor, magnetic core, and primary conductor realizes the space-saving and high reliability.
Features
- Bidirectional type
- Electrical isolation between the primary conductor and the sensor signal
- 5V single supply operation
- Ratiometric output
- Low variation and low temperature drift of sensitivity and offset voltage
- Low noise output: 2.1mVrms (max.)
- Fast response time: 1μs (typ.)
- Small-sized surface mount package, halogen free
Functional Block Diagram
P
Magnetic
Core
Amplifier
Buffer
VOUT
Hall
Sensor
Compensation
VSS
Bias Unit
EEPROM Unit
VDD
DATA_IO SCLK
N
Figure 1. Functional block diagram of CQ-209D
MS1374-E-03
-1-
2014/08
[CQ-209D]
Electrical Characteristics
Table 5. Electrical characteristics
Conditions (unless otherwise specified): Ta=25C,VDD=5V
Parameter
Symbol
Conditions
Maximum Primary Current
(RMS)
IRMSmax Ta=−40~90C
Min.
−20
Current Consumption
IDD No Loads
Sensitivity*
Vh
49.0
Offset Voltage*
Linear Sensing Range
Vof IIN=0A
INS
2.432
−41
Linearity Error*
Rise Response Time
Fall Response Time
Bandwidth
ρ
tr
IIN 90% → VOUT 90%
CL=100pF
tf
IIN 10% → VOUT 10%
CL=100pF
fT −3dB, CL=100pF
−1
Output Noise**
VNrms
Temperature Drift of
Sensitivity at High
Temperature**
Maximum Temperature Drift
of Sensitivity at Low
Temperature
Maximum Temperature Drift
of Offset voltage
Ratiometricity Error of
Sensitivity**
Ratiometricity Error of Offset
Voltage**
Primary Conductor
Resistance
Vh-dH
Vh-dLmax
Vof-dmax
Vh-R
Vof-R
R1
Variation ratio to Vh(Ta=35C)
Ta=35~90C
Variation ratio to Vh(Ta=35C)
Ta=−40~35C
Variation from Vof(Ta=35C)
Ta=−40~90C, IIN=0A
VDD=4.5V~5.5V
VDD=4.5V~5.5V
IIN=0A
−1
−1
Isolation Voltage**
VINS AC 50/60Hz, 60s
2.5
Isolation Resistance**
RINS
DC 1kV
500
Typ.
50.0
2.500
1
1
400
±1
±2
±14.5
340
Max.
20
9
51.0
2.568
41
1
Units
A
mA
mV/A
V
A
%F.S.
μs
μs
kHz
2.1 mVrms
%
%
mV
1%
1%
μΩ
kV
MΩ
* These parameters can drift by the values described in „Reliability Tests‟ section over the lifetime of the product.
** These characteristics are guaranteed by design.
MS1374-E-03
-4-
2014/08
4페이지 Package Dimensions
[CQ-209D]
Unit:mm
NOTE1 ) The tolerances of dimensions without any mention are ±0.1mm.
NOTE2 ) An adhesive material (RoHS compliant, halogen free) is applied on a part of “Adhesive Area” to hold the
magnetic core.
Terminals: Cu
Plating for Terminals: Sn (100%)
RoHS compliant, halogen free
Figure 9. Package outline
MS1374-E-03
-7-
2014/08
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ CQ-209D.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CQ-209B | High-Speed Small Current Sensor | Asahi Kasei Microsystems |
CQ-209D | High-Speed Small-Sized Current Sensor | Asahi Kasei Microsystems |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |