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부품번호 | GB25RF120K 기능 |
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기능 | IGBT PIM MODULE | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 13 페이지수
IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
• UL Listed
ECONO2 PIM
PD - 94552
GB25RF120K
VCES = 1200V
IC = 25A, TC=80°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.40V
Absolute Maximum Ratings (TJ =25°C, unless otherwise indicated)
Parameter
Symbol Test Conditions
Inverter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Diode Maximum Forward Current
Power Dissipation
Input Repetitive Peak Reverse Voltage
Rectifier Average Output Current
Surge Current (Non Repetitive)
I2t (Non Repetitive)
Brake Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Power Dissipation
Repetitive Peak Reverse Voltage
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
VCES
VGES
IC
ICM
IFM d
PD
VRRM
IF(AV)
IFSM
I2t
VCES
VGES
IC
ICM
PD
VRRM
TJ
TSTG
VISOL
Continuous
1 device
25°C / 80°C
25°C
25°C
25°C
50/60Hz sine pulse
80°C
Rated VRRM applied, 10ms,
sine pulse
Continuous
1 device
25°C / 80°C
25°C
25°C
——
——
AC(1min.)
Thermal and Mechanical Characteristics
Parameter
Junction-to-Case Inverter IGBT Thermal Resistance
Junction-to-Case Inverter FRED Thermal Resistance
Junction-to-Case Brake IGBT Thermal Resistance
Junction-to-Case Brake Diode Thermal Resistance
Junction-to-Case Input Rectifier Thermal Resistance
Mounting Torque (M5)
Symbol
RTHJC
Min
—
—
—
—
—
2.7
Typical
—
—
—
—
—
—
1
Ratings
1200
±20
40 / 25
80
80
198
1600
20
250
316
1200
±20
25 / 15
50
104
1200
150
-40 to +125
2500
Units
V
A
W
V
A
A2s
V
A
W
V
°C
V
Maximum
0.63
1.0
1.2
2.3
0.85
3.3
Units
°C/W
Nm
www.irf.com
10/17/02
GB25RF120K
Inverter
50
45 VGE = 18V
40 VGE = 15V
VGE = 12V
35 VGE = 10V
30 VGE = 8.0V
25
20
15
10
5
0
0123456
VCE (V)
Fig. 1 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
350
300
250 TJ = 25°C
TJ = 125°C
200
150
100
TJ = 125°C
50
TJ = 25°C
0
0 5 10 15 20
VGE (V)
Fig. 3 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
50
45
40
VGE = 18V
VGE = 15V
35 VGE = 12V
VGE = 10V
30 VGE = 8.0V
25
20
15
10
5
0
0123456
VCE (V)
Fig. 2 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 12.5A
ICE = 25A
ICE = 50A
10 15
VGE (V)
Fig. 4 - Typical VCE vs. VGE
TJ = 25°C
20
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 12.5A
ICE = 25A
ICE = 50A
10 15
VGE (V)
Fig.5 - Typical VCE vs. VGE
TJ = 125°C
20
10000
1000
100
Cies
Coes
Cres
10
0
20 40 60 80 100
VCE (V)
Fig. 6- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
4 www.irf.com
4페이지 Inverter
GB25RF120K
1
D = 0.50
0.1
0.01
0.001
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W)
τCτ 0.120
τ3τ3 0.201
0.309
τi (sec)
0.000439
0.009470
0.018320
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (Inverter IGBT)
10
1
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01 0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W)
τCτ 0.140
τ3τ3 0.257
0.602
τi (sec)
0.000230
0.002752
0.036788
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (Inverter FRED)
900 45
800 40
tf
700 35
600 30
90% ICE
500 25
900 90
800
tr
700
80
70
600 60
TEST CURRENT
500 50
400 20
300 15
5% V CE
200 10
5% ICE
100 5
0
-100
-0.60 -0.10
Eoff Loss
0.40 0.90
Time(µs)
1.40
0
-5
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 125°C using Fig. CT.4
www.irf.com
400 90% test current 40
300 30
200
10% test current
20
5% VCE
100 10
0
-100
9.40
9.60
Eon Loss
0
-10
9.80 10.00 10.20 10.40
Time (µs)
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 125°C using Fig. CT.4
7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
GB25RF120K | IGBT PIM MODULE | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |