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GB25RF120K 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 GB25RF120K은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 GB25RF120K 자료 제공

부품번호 GB25RF120K 기능
기능 IGBT PIM MODULE
제조업체 International Rectifier
로고 International Rectifier 로고


GB25RF120K 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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GB25RF120K 데이터시트, 핀배열, 회로
IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
• UL Listed 
ECONO2 PIM
PD - 94552
GB25RF120K
VCES = 1200V
IC = 25A, TC=80°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.40V
Absolute Maximum Ratings (TJ =25°C, unless otherwise indicated)
Parameter
Symbol Test Conditions
Inverter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Diode Maximum Forward Current
Power Dissipation
Input Repetitive Peak Reverse Voltage
Rectifier Average Output Current
Surge Current (Non Repetitive)
I2t (Non Repetitive)
Brake Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Power Dissipation
Repetitive Peak Reverse Voltage
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
VCES
VGES
IC
ICM
IFM d
PD
VRRM
IF(AV)
IFSM
I2t
VCES
VGES
IC
ICM
PD
VRRM
TJ
TSTG
VISOL
Continuous
1 device
25°C / 80°C
25°C
25°C
25°C
50/60Hz sine pulse
80°C
Rated VRRM applied, 10ms,
sine pulse
Continuous
1 device
25°C / 80°C
25°C
25°C
——
——
AC(1min.)
Thermal and Mechanical Characteristics
Parameter
Junction-to-Case Inverter IGBT Thermal Resistance
Junction-to-Case Inverter FRED Thermal Resistance
Junction-to-Case Brake IGBT Thermal Resistance
Junction-to-Case Brake Diode Thermal Resistance
Junction-to-Case Input Rectifier Thermal Resistance
Mounting Torque (M5)
Symbol
RTHJC
Min
2.7
Typical
1
Ratings
1200
±20
40 / 25
80
80
198
1600
20
250
316
1200
±20
25 / 15
50
104
1200
150
-40 to +125
2500
Units
V
A
W
V
A
A2s
V
A
W
V
°C
V
Maximum
0.63
1.0
1.2
2.3
0.85
3.3
Units
°C/W
Nm
www.irf.com
10/17/02




GB25RF120K pdf, 반도체, 판매, 대치품
GB25RF120K
Inverter
50
45 VGE = 18V
40 VGE = 15V
VGE = 12V
35 VGE = 10V
30 VGE = 8.0V
25
20
15
10
5
0
0123456
VCE (V)
Fig. 1 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
350
300
250 TJ = 25°C
TJ = 125°C
200
150
100
TJ = 125°C
50
TJ = 25°C
0
0 5 10 15 20
VGE (V)
Fig. 3 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
50
45
40
VGE = 18V
VGE = 15V
35 VGE = 12V
VGE = 10V
30 VGE = 8.0V
25
20
15
10
5
0
0123456
VCE (V)
Fig. 2 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 12.5A
ICE = 25A
ICE = 50A
10 15
VGE (V)
Fig. 4 - Typical VCE vs. VGE
TJ = 25°C
20
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 12.5A
ICE = 25A
ICE = 50A
10 15
VGE (V)
Fig.5 - Typical VCE vs. VGE
TJ = 125°C
20
10000
1000
100
Cies
Coes
Cres
10
0
20 40 60 80 100
VCE (V)
Fig. 6- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
4 www.irf.com

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GB25RF120K 전자부품, 판매, 대치품
Inverter
GB25RF120K
1
D = 0.50
0.1
0.01
0.001
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W)
τCτ 0.120
τ3τ3 0.201
0.309
τi (sec)
0.000439
0.009470
0.018320
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (Inverter IGBT)
10
1
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01 0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W)
τCτ 0.140
τ3τ3 0.257
0.602
τi (sec)
0.000230
0.002752
0.036788
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (Inverter FRED)
900 45
800 40
tf
700 35
600 30
90% ICE
500 25
900 90
800
tr
700
80
70
600 60
TEST CURRENT
500 50
400 20
300 15
5% V CE
200 10
5% ICE
100 5
0
-100
-0.60 -0.10
Eoff Loss
0.40 0.90
Time(µs)
1.40
0
-5
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 125°C using Fig. CT.4
www.irf.com
400 90% test current 40
300 30
200
10% test current
20
5% VCE
100 10
0
-100
9.40
9.60
Eon Loss
0
-10
9.80 10.00 10.20 10.40
Time (µs)
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 125°C using Fig. CT.4
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관련 데이터시트

부품번호상세설명 및 기능제조사
GB25RF120K

IGBT PIM MODULE

International Rectifier
International Rectifier

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