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PDF C1815 Data sheet ( Hoja de datos )

Número de pieza C1815
Descripción SOT-23 Plastic-Encap sulate Transistors
Fabricantes WILLAS 
Logotipo WILLAS Logotipo

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1. NPN Transistor ( PDF )






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No Preview Available ! C1815 Hoja de datos, Descripción, Manual

WILLAS
SOT-23 Plastic-Encap sulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M
&115 THRU
FM1200-
Pb Free Prod
Features
Batch process design, excellent power dissipation offers
TRANSISTORLboe(wtNt epPrrNroef)vi leerssuerlfeaackeamgoeucnutrerde natpapnl idc at ht ieornmianlorredsei sr ttaon c e .
FEATURES
optimize board space.
Low power loss, high efficiency.
Power diHssigihpcautriroennt capability, low forward voltage drop.
Pb-Free pacHkiaghgseurigse acavpaaiblialitby.le
RoHS produ•• cUGtlutrfaaordrhriipgnhag-csfopkreionevdgesrcvwooitlcdtaheginegsp.urofftiexctioGn.
Halogen freeSpilircoodn uepcitafxoiarl pplaancakrinchgipc, modeteal siulicffoixn juHnction.
Lead-free parts meet environmental standards of
MARKING : HMFIL-STD-19500 /228
RoHS product for packing code suffix "G"
MAXIMUM RAHTaIlNogGenSfre(Te ap=ro2d5uct four npalecksinsg ocotdheesruwffiixs"eH"noted)
Mechanical data
Symbol Epoxy : UL94-V0 rated flame retaPradraanmt eter
Package outline
SOT-2SO3D-123H
0.146(3.7)
0.130(3.3)
1. BASE
2. EMITTER
3. COLLECTOR
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Value
Unit 0.040(1.0)
0.024(0.6)
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
CaseC:oMlloelcdteodr-pBlaasstiec,VSoOltDa-g1e23H
TermCinoallesc:tPolra-tEemd ittetermr Vinoaltlsa,gseolderable
per
,
MIL-STD-750
0.031(0.8) Typ.
60
50
V
0.031(0.8) Typ.
V
EmitteMr-BetahsoedV2o0l2ta6ge
Polarity : Indicated by cathode band
Collector Current -Continuous
Mounting Position : Any
WeigChot l:leAcptporroPxiomwaeter dD0is.s0i1p1atgioranm
5V
Dimensions in inches and (millimeters)
150 mA
200 mW
Junction Temperature
150
StMorAagXeIMTeUmMpeRraAtuTrIeNGS AND ELECTRICAL CHARACTERISTICS-55-150
Ratings at 25℃ ambient temperature unless otherwise specified.
ELECTRSICinAgleLpChaHseAhRalAf wCaTveE, R60IHSzT, IreCsSisti(vTeao=f 2in5ductivuenloleads.s otherwise specified)
  For capacitive load, derate current by 20%
Parameter RATINGS
Marking Code
CollectMoar-xbimausme RberceuarrkedntoPwenakvRoelvtaergsee Voltage
SymbSoYlMBOL FTMe1s2t0-McHoFnMd1i3t0i-oMnHsFM140-MH FM1M50i-nMH FM160T-MyHpFM180-MMH aFxM1100-MUHnFitM1150-MH FM120
12 13 14 15 16
18 10
115 120
V(BR)CBVORRM IC==1200uA, I3E0 0
40
5060 60
80
100 V 150
200
CollectMoar-xeimmuimttRerMbSrVeoaltkadgeown voltage
Maximum DC Blocking Voltage
V(BR)CEVORMS I=C= 01.41mA, IB210
VDC 20 30
28
40
3550 42
50 60
56
70 V 105
140
80 100 150 200
CollectMoraxcimuut-mofAfvceurargreeFnotrward Rectified Current
ICBO I=O VCB=60V, IE 0
1.0 0.1 uA
  
CollectPoerakcuFotr-woafrfdcSuurrgreenCturrent 8.3 ms single half sine-wavIeCEO IFS=M VCE=50V, IB 0
superimposed on rated load (JEDEC method)
EmitterTycpuicta-ol TffhecrumrarleRnetsistance (Note 2)
DC curTreypnictagl aJuinnction Capacitance (Note 1)
Operating Temperature Range
IEBO R=ΘJA VEB= 5V, IC 0 
hFE
CJ
TJ
 
VCE= 6V, I-C5=5 t2om+A125
 
30
40
130
120
 
0.1 uA
0  .1 uA
 
4-5050 to +150
CollectSotro-reagmeiTtteemrpsearattuurreatRioanngevoltage
 
VCE(satT) STG IC=100mA, IB= 10mA
- 65 to +175 0.25
V
Base-emitter saturationCHvAoRltAaCgTeERISTICS
VBE(saSt)YMBOLICF=M112000-MmHAF,MI1B3=0-1M0HmFMA140-MH FM150-MH FM160-MH FM180-MH1FM1100-MH VFM1150-MH FM1200
Maximum Forward Voltage at 1.0A DC
TransitMioanximfruemquAevenrcagye Reverse Current at @T A=25℃ fT
Rated DC Blocking Voltage
@T A=125℃
VF
IR
VCE=10V, IC= 1m0A.5, 0
f=30MHz
0.70
80
0.5
10
0.85
0.9
MHz
0.9
 
NOTES:
CLAS1S- MIFeIaCsuAreTd aIOt 1NMHOZ aFndhapFpElied reverse voltage of 4.0 VDC.
Rank 2- Thermal Resistance From Junction to Ambient L
 
Rang e
130-200
H
200-400
2012-06
2012-0
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.

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