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부품번호 | LDTA144EM3T5G 기능 |
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기능 | Bias Resistor Transistors | ||
제조업체 | LRC | ||
로고 | |||
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
With Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-723 package
which is designed for low power surface mount applications.
ƽSimplifies Circuit Design
ƽReduces Board Space
ƽReduces Component Count
ƽThe SOT-723 Package can be Soldered using Wave or Reflow.
ƽAvailable in 4 mm, 8000 Unit Tape & Reel
ƽThese are Pb-Free Devices.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Collector Current
IC
THERMAL CHARACTERISTICS
50
50
100
Characteristic
Symbol
Max
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD 260 (Note 1)
600 (Note 2)
2.0 (Note 1)
4.8 (Note 2)
Thermal Resistance –
Junction-to-Ambient
RθJA
480 (Note 1)
205 (Note 2)
Junction and Storage
Temperature Range
TJ, Tstg –55 to +150
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C
LDTA114EM3T5G
Series
3
1
SOT-723
2
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAM
3
XX M
12
xx = Specific Device Code
M = Date Code
Version 1.0
LDTA114EM3T5G_S-1/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G_Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max Unit
Input Resistor
LDTA114EM3T5G
LDTA124EM3T5G
LDTA144EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G
LDTA143TM3T5G
LDTA123EM3T5G
LDTA143EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA115EM3T5G
LDTA144WM3T5G
R1 7.0 10 13 kW
15.4 22 28.6
32.9 47 61.1
7.0 10 13
7.0 10 13
3.3 4.7 6.1
1.5 2.2 2.9
3.3 4.7 6.1
3.3 4.7 6.1
15.4 22 28.6
1.54 2.2 2.86
70 100 130
32.9 47 61.1
Resistor Ratio
/
LDTA114EM3T5G/LDTA124EM3T5G/LDTA144EM3T5G
LDTA115EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G/LDTA143TM3T5G
LDTA123EM3T5G/LDTA143EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA144WM3T5G
R1/R2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
300
250
200
150
100
50
0−50
RqJA = 480°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
Version 1.0
LDTA114EM3T5G_S-4/11
4페이지 LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G_Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA144EM3T5G
1
IC/IB = 10
0.1
TA = −25°C
25°C
75°C
1000
100
TA = 75°C
25°C
−25°C
0.01 0
10 20 30
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
40
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
100
1
f = 1 MHz
100
TA = 75°C
25°C
0.8
lE = 0 V
TA = 25°C
10
−25°C
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
00
0.001
10 20 30 40 50
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
VO = 0.2 V
TA = −25°C
25°C
10 75°C
Version 1.0
1
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
LDTA114EM3T5G_S-7/11
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ LDTA144EM3T5G.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
LDTA144EM3T5G | Bias Resistor Transistors | LRC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |