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PDF LDTA124EET1 Data sheet ( Hoja de datos )
| Número de pieza | LDTA124EET1 | |
| Descripción | Bias Resistor Transistors | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new digital transistor is designed to replace a single device
and its external resistor bias network. The BRT (Bias Resistor Tra-
nsistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–89 package which is designed for low power surface mount
applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
50
50
Collector Current
IC 100
Unit
Vdc
Vdc
mAdc
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA124EET1
6B
22 22 3000/Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR–4 Board (Note 1.) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 1.)
Total Device Dissipation,
FR–4 Board (Note 2.) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 2.)
Junction and Storage Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 × 1.0 Inch Pad
LDTA124EET1
3
1
2
SC-89
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
Symbol
PD
RθJA
PD
RθJA
TJ, Tstg
Max
200
1.6
600
300
2.4
400
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
P3–1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet LDTA124EET1.PDF ] | |
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