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PDF MSF10N60 Data sheet ( Hoja de datos )
| Número de pieza | MSF10N60 | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | Bruckewell | |
| Logotipo |  |
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MSF10N60
600V N-Channel MOSFET
Description
The MSF10N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
IDM Drain Current Pulsed
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dV/dt
Peak Diode Recovery dV/dt
Value
600
±30
9.5
5.7
38
700
9.5
15.6
4.5
Unit
V
V
A
A
A
mJ
A
mJ
V/ns
Publication Order Number: [MSF10N60]
© Bruckewell Technology Corporation Rev. A -2014
1 page  
MSF10N60
600V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF10N60]
© Bruckewell Technology Corporation Rev. A -2014
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MSF10N60.PDF ] | |
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