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Datasheet 80NF03L-04 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
180NF03L-04STP80NF03L-04

STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET TYPE VDSS RDS(on) STB80NF03L-04/-1 STP80NF03L-04 30 V <0.004 Ω 30 V <0.004 Ω s TYPICAL RDS(on) = 0.0035Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LO
STMicroelectronics
STMicroelectronics		data


80N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
180N02NTD80N02

NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com V(BR)DSS 24 V RDS(on) TYP 5.0 mW ID MAX 80 A • Pb−Free Packages are Available ww
ON Semiconductor
ON Semiconductor		data
280N03LSPB80N03L

SPP80N03L SIPMOS® Power Transistor Features • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 V A RDS(on) 0.006 Ω • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature
Siemens
Siemens		data
380N055NP80N055

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION These products are N-channel MOS Field Effect www.DataSheet4UT.rcaonmsistor designed for high current switching applications. FEATURES • Channel temperature 17
NEC
NEC		data
480N06N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 80N06 ·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PA
Inchange Semiconductor
Inchange Semiconductor		mosfet
580N08N-CHANNEL 80V (D-S) MOSFET

UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET N-CHANNEL 80V (D-S) MOSFET „ DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC trench technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc.
Unisonic Technologies
Unisonic Technologies		mosfet
680N60N-Channel Enhancement Mode Field Effect Transistor

CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. Features Simple Drive Re
Cmos
Cmos		transistor
780N60AIZGK80N60A

Preliminary data HiPerFASTTM IGBT www.datasheet4u.com IXGK80N60A VCES IC25 VCE(sat) tfi = 600 V = 80 A = 2.7 V = 275 ns Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150 °C TJ = 25° C to 150°C; R GE = 1 M Ω Continuous Tra
IXYS Corporation
IXYS Corporation		data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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