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PDF BUZ103S Data sheet ( Hoja de datos )
| Número de pieza | BUZ103S | |
| Descripción | SIPMOS Power Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUZ103S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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BUZ 103S
SIPMOS Power Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• dv/dt rated
• 175 ˚C operating temperature
VDS
RDS(on)
ID
55
0.036
31
V
Ω
A
Type
BUZ103S
BUZ103S E3045A
BUZ103S E3045
Package Ordering Code Packaging
P-TO220-3-1 Q67040-S4009-A2 Tube
P-TO263-3-2 Q67040-S4009-A6 Tape and Reel
P-TO263-3-2 Q67040-S4009-A5 Tube
Pin 1 Pin 2 Pin 3
GDS
Maximum Ratings at Tj = 25 ˚C unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 ˚C
TC = 100˚C
ID
Pulsed drain current
IDpulse
TC = 25 ˚C
Avalanche energy, single pulse
ID = 31 A, VDD = 25 V, RGS = 25 Ω
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = 31 A, VDS = 40 V, di/dt = 200 A/µs,
Tjmax = 175 ˚C
Gate source voltage
Power dissipation
TC = 25 ˚C
VGS
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
31
22
124
140
7.5
6
±20
75
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
˚C
Data Book
1
05.99
1 page  
BUZ 103S
Power Dissipation
Ptot = f (TC)
BUZ103S
80
W
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 ˚C 190
TC
Safe operating area
ID = f (VDS)
parameter : D = 0 , TC = 25 ˚C
10 3 BUZ103S
A
10 2
tp = 13.0µs
Drain current
ID = f (TC)
parameter: VGS ≥ 10 V
BUZ103S
34
A
28
24
20
16
12
8
4
0
0 20 40 60 80 100 120 140 160 ˚C 190
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 2 BUZ103S
K/W
10 1
10 1
10
0
10
-1
Data Book
10 0
100 µs
1 ms
10 ms
DC
10 1 V 10 2
VDS
5
10 0
10 -1
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-2
10
-5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
s
tp
10 3
05.99
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUZ103S.PDF ] | |
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| BUZ103S | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature) | Siemens Semiconductor Group |
| BUZ103S | SIPMOS Power Transistor | Infineon |
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