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PDF ISL9V5045S3ST_F085 Data sheet ( Hoja de datos )
| Número de pieza | ISL9V5045S3ST_F085 | |
| Descripción | EcoSPARK N-Channel Ignition IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ISL9V5045S3ST_F085 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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February 2012
ISL9V5045S3ST_F085
EcoSPARK® N-Channel Ignition IGBT
500mJ, 450V
Features
SCIS Energy = 500mJ at TJ = 25oC
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive Ignition Coil Driver Circuits
Coil - On Plug Applications
General Description
The ISL9V5045S3ST_F085 is next generation ignition IGBT
that offer outstanding SCIS capability in the industry
standard D2-Pak (TO-263) plastic package. This device
is intended for use in automotive ignition circuits,
specifically as a coil drivers. Internal diodes provide voltage
clamping without the need for external components.
EcoSPARK® devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
Package
GATE
EMITTER
COLLECTOR
(FLANGE)
JEDEC TO-263AB
D2-Pak
Symbol
GATE
R1
R2
COLLECTOR
EMITTER
ISL9V5045S3ST_F085 Rev. A1
1
www.fairchildsemi.com
1 page  
Typical Characteristics (Continued)
55
50 VGE = 4.0V
45
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
1000
VECS = 24V
100
VCES = 300V
10
VCES = 250V
1
0.1
-50 -25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
3000
2500
FREQUENCY = 1 MHz
2000
CIES
1500
1000
500
CRES
COES
0
0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. Capacitance vs Collector to Emitter
Voltage
2.0
VCE = VGE
1.8 ICE = 1mA
1.6
1.4
1.2
1.0
0.8
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
20
ICE = 6.5A, VGE = 5V, RG = 1KΩ
18
Resistive tOFF
16
14
Inductive tOFF
12
10
8
6
Resistive tON
4
2
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
175
8
IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C
7
6
5
VCE = 12V
4
3
2
1 VCE = 6V
0
0 10 20 30 40
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
50
ISL9V5045S3ST_F085 Rev. A1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ISL9V5045S3ST_F085.PDF ] | |
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