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PDF PBHV9560Z Data sheet ( Hoja de datos )
| Número de pieza | PBHV9560Z | |
| Descripción | 0.5 A PNP high-voltage low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PBHV9560Z
600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
12 August 2014
Product data sheet
1. General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8560Z
2. Features and benefits
• High voltage
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC
• High collector current gain hFE at high IC
• AEC-Q101 qualified
3. Applications
• Electronic ballast for fluorescent lighting
• LED driver for LED chain module
• LCD backlighting
• HID front lighting
• Automotive motor management
• Hook switch for wired telecom
• Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter
voltage
collector current
DC current gain
Conditions
open base
VCE = -10 V; IC = -50 mA; Tamb = 25 °C
Min Typ Max Unit
- - -600 V
- - -0.5 A
70 130 -
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NXP Semiconductors
PBHV9560Z
600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
10. Characteristics
Table 7.
Symbol
ICBO
ICES
IEBO
hFE
VCEsat
VBEsat
fT
Cc
Ce
Characteristics
Parameter
Conditions
collector-base cut-off
current
VCB = -400 V; IE = 0 A; Tamb = 25 °C
VCB = -400 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off VCE = -400 V; VBE = 0 V; Tamb = 25 °C
current
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
DC current gain
VCE = -10 V; IC = -50 mA; Tamb = 25 °C
VCE = -10 V; IC = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
collector-emitter
saturation voltage
IC = -50 mA; IB = -5 mA; Tamb = 25 °C
IC = -100 mA; IB = -20 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
base-emitter saturation IC = -50 mA; IB = -5 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
transition frequency VCE = -10 V; IC = -30 mA; f = 100 MHz
collector capacitance
VCB = -20 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
emitter capacitance
VEB = -0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
Min Typ Max Unit
- - -100 nA
- - -10 µA
- - -100 nA
- - -100 nA
70 130 -
50 90 -
- -150 -250 mV
- -140 -250 mV
- - -900 mV
- 38 - MHz
- 12 - pF
- 390 - pF
PBHV9560Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 14
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NXP Semiconductors
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
PBHV9560Z v.1
20140812
PBHV9560Z
600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PBHV9560Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 14
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PBHV9560Z.PDF ] | |
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