Datasheet STGP19NC60H Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	STGP19NC60H	19 A - 600 V - very fast IGBT STGP19NC60H STGW19NC60H 19 A - 600 V - very fast IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ High input impedance (voltage driven) Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advanced PowerME	STMicroelectronics	igbt
2	STGP19NC60HD	19 A - 600 V - very fast IGBTE STGB19NC60HD - STGF19NC60HD STGP19NC60HD - STGW19NC60HD 19 A - 600 V - very fast IGBT Features ■ Low ■ Low ■ on-voltage drop (VCE(sat)) 3 1 1 3 2 CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery anti-parallel diode D²PAK TO-220 Appl	STMicroelectronics	igbt

STG Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	STG2017	Dual N-Channel E nhancement Mode Field Effect Transistor S T G 2017 S amHop Microelectronics C orp. May,18 2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.5V 28 @ V G S = 2.5V	SamHop Microelectronics	transistor
2	STG2454	Dual N-Channel Enhancement Mode Field Effect Transistor Gr Pr STG2454 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 24V ID 7A R DS(ON) (m Ω) Max 17 @ VGS=4.0V 29 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD	SamHop Microelectronics	transistor
3	STG2507	Dual P-Channel E nhancement Mode Field Effect Transistor S T G 2507 S amHop Microelectronics C orp. May,10 2005 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( mW ) Max ID 6.2A R DS (ON) S uper high dense cell design for low R DS (ON ). 17 @ V G S = -4.5V 25 @ V G S =	SamHop Microelectronics	transistor
4	STG3155	Low voltage 0.5 Ohm Max single SPDT switch STG3155 Low voltage 0.5Ω Max single SPDT switch with break-before-make feature Features ■ High speed: – tPD = 1.5ns (Typ.) at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C Low "ON" resistance: – RON = 0.5Ω (TA = 25ºC) a	ST Microelectronics	data
5	STG3157	Low voltage low on-resistance SPDT switch STG3157 Low voltage low on-resistance SPDT switch with break-before-make feature Features ■ High speed: – tPD = 0.3 ns (max) at VCC = 4.5 V – tPD = 0.8 ns (max) at VCC = 3.0 V – tPD = 1.2 ns (max) at VCC = 2.3 V ■ Ultra low power dissipation: – ICC = 1 µA (max) at TA = 85 °C ■ Low o	ST Microelectronics	data
6	STG3159	single SPDT switch STG3159 Low voltage 1Ω max single SPDT switch with break-before-make feature Features ■ High speed: – tPD = 1.5ns (Typ.) at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C Low "ON" resistance: – RON = 1.	STMicroelectronics	data
7	STG3220	Low voltage high bandwidth dual SPDT switch STG3220 Low voltage high bandwidth dual SPDT switch Features ■ ■ Ultra low power dissipation: – ICC = 1 μA (max.) at TA = 85 °C Low "ON" resistance: – RON = 4.8 Ω (TA = 25 ºC) at VCC = 4.3 V – RON = 5.9 Ω (TA = 25 ºC) at VCC = 3.0 V Wide operating voltage range:	ST Microelectronics	data

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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