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부품번호 | VS-10CTQ150SPbF 기능 |
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기능 | High Performance Schottky Rectifier | ||
제조업체 | Vishay | ||
로고 | |||
전체 8 페이지수
www.vishay.com
VS-10CTQ150SPbF, VS-10CTQ150-1PbF
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 5 A
VS-10CTQ150SPbF
VS-10CTQ150-1PbF
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
D2PAK
2
1 Common 3
Anode cathode Anode
TO-262
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
D2PAK, TO-262
2x5A
150 V
0.93 V
7 mA at 125 °C
175 °C
Common cathode
5 mJ
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
5 Apk, TJ = 125 °C (per leg)
Range
VALUES
10
150
620
0.73
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-10CTQ150SPbF
VS-10CTQ150-1PbF
150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
per leg
forward current, see fig. 5 per device
IF(AV)
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
IFSM
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TC = 155 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
5
10
620
115
5
1
UNITS
A
A
mJ
A
Revision: 20-May-14
1 Document Number: 94116
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
1000
VS-10CTQ150SPbF, VS-10CTQ150-1PbF
Vishay Semiconductors
At any rated load condition and
with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
D.U.T.
Current
monitor
L
IRFP460
Rg = 25 Ω
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V
Revision: 20-May-14
4 Document Number: 94116
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 Outline Dimensions
Vishay High Power Products
D2PAK, TO-262
DIMENSIONS FOR TO-262 in millimeters and inches
Modified JEDEC outline TO-262
(Datum A) (2) (3)
E
A
(3) L1
D
A
c2
B
A
Seating
plane
1 23
L2 C C
BB
L (2)
E
D1 (3)
2xe
0.010 M A M B
Lead tip
3 x b2
3xb
cA
A1
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
E1 (3)
Section A - A
Plating
(4)
b1, b3
Base
metal
c c1 (4)
(b, b2)
Section B - B and C - C
Scale: None
SYMBOL
MILLIMETERS
MIN.
MAX.
A 4.06 4.83
A1 2.03 3.02
b 0.51 0.99
b1 0.51 0.89
b2 1.14 1.78
b3 1.14 1.73
c 0.38 0.74
c1 0.38 0.58
c2 1.14 1.65
D 8.51 9.65
D1 6.86 8.00
E 9.65 10.67
E1 7.90 8.80
e 2.54 BSC
L
13.46
14.10
L1 - 1.65
L2 3.56 3.71
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not
exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
0.530
-
0.140
INCHES
0.100 BSC
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
0.555
0.065
0.146
NOTES
4
4
4
2
3
2, 3
3
3
(6) Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
www.vishay.com
2
For technical questions concerning discrete products, contact: [email protected]
For technical questions concerning module products, contact: [email protected]
Document Number: 95014
Revision: 31-Mar-09
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |