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Número de pieza | RQJ0603LGDQA | |
Descripción | Silicon P Channel MOS FET Power Switching | |
Fabricantes | Renesas | |
Logotipo | ||
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No Preview Available ! RQJ0603LGDQA
Silicon P Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 158 mΩ typ (VGS = –10 V, ID = –0.9 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is “LG”.
Preliminary Datasheet
R07DS0300EJ0600
Rev.6.00
Jan 10, 2014
3
D
G 1. Source
2 2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(Pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Ratings
–60
+10 / –20
–1.8
–4.5
–1.8
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0300EJ0600 Rev.6.00
Jan 10, 2014
Page 1 of 7
1 page RQJ0603LGDQA
Dynamic Input Characteristics
00
VDD = –10 V
–20
–40
–60 VDS
–25 V
–50 V
VDD = –50 V
–25 V
–10 V
–4
–8
VGS –12
–80 ID = –1.8 A
Tc = 25°C
–100
0
24
68
Gate Charge Qg (nC)
–16
–20
10
Typical Capacitance vs.
Drain to Source Voltage
1000
VGS = 0 V
f = 1 MHz
Ciss
100
Crss
Coss
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–1.0
–0.8
Pulse Test
Tc = 25°C
–0.6
–0.4
VGS = –10 V
–5 V
VGS = 0 V, 5 V
–0.2
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
Preliminary
Switching Characteristics
1000
100
td(on)
td(off)
VDD = -10 V
VGS = -10 V
Rg = 4.7 Ω
PW = 5 μs
Tc = 25°C
10 tr
tf
1–0.01
–0.1
–1
Drain Current ID (A)
–10
Input Capacitance vs.
Gate to Source Voltage
700
VDS = 0 V
f = 1 MHz
650
600
550
500
450
400
–10
–5
0
5 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–0.8
VGS = 0
–0.7
–0.6
–0.5
–0.4
ID = –10 mA
–0.3 –1 mA
–0.2
25
50 75 100 125 150
Case Temperature Tc (°C)
R07DS0300EJ0600 Rev.6.00
Jan 10, 2014
Page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RQJ0603LGDQA.PDF ] |
Número de pieza | Descripción | Fabricantes |
RQJ0603LGDQA | Silicon P Channel MOS FET Power Switching | Renesas |
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