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부품번호 | A2069 기능 |
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기능 | PNP Transistor - 2SA2069 | ||
제조업체 | Toshiba | ||
로고 | |||
전체 5 페이지수
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2069
High-Speed Switching Applications
DC-DC Converter Applications
2SA2069
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = −0.15 A)
• Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max)
• High-speed switching: tf = 37 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
t = 10 s
DC
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
(Note 1)
Tj
Tstg
−20
−20
−7
−1.5
−2.5
−150
2.0
1.0
150
−55 to 150
V
V
V
A
mA
W
°C
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm2)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2006-11-09
2SA2069
1000
rth – tw
100
10
1
0.001
0.01
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm2)
0.1 1 10 100 1000
Pulse width tw (s)
Safe Operating Area
−10
IC max (pulsed) ♦ 10 ms♦ 1 ms♦ 100 μs♦
IC max (continuous) 100 ms♦*
−1
10 s♦*
DC operation *
(Ta = 25°C)
♦: Single nonrepetitive pulse
−0.1
Ta = 25°C
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2). These characteristic
curves must be derated linearly
with increase in temperature.
−0.01
−0.1
−1
−10
Collector-emitter voltage VCE (V)
−100
4 2006-11-09
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ A2069.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
A2061 | PNP Transistor - 2SA2061 | Toshiba |
A2062 | PNP Transistor - 2SA2062 | Sanyo Semicon Device |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |