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부품번호 | FS450R12KE3 기능 |
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기능 | IGBT-Module | ||
제조업체 | Infineon | ||
로고 | |||
전체 8 페이지수
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS450R12KE3
-EconoPACK™+ModulmitTrench/FeldstopIGBT3undHighEfficiencyDiode
-EconoPACK™+withtrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 150
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VCES
IC nom
IC
ICRM
Ptot
VGES
1200
450
600
900
2100
+/-20
V
A
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 18,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGon = 1,6 Ω
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGon = 1,6 Ω
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,6 Ω
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,6 Ω
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 450 A, VCE = 600 V, LS = 80 nH
VGE = ±15 V
RGon = 1,6 Ω
Tvj = 25°C
Tvj = 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 450 A, VCE = 600 V, LS = 80 nH
VGE = ±15 V
RGoff = 1,6 Ω
Tvj = 25°C
Tvj = 125°C
Kurzschlußverhalten
SCdata
VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
1,70 2,15
2,00
V
V
5,0 5,8 6,5 V
4,30 µC
1,7 Ω
32,0 nF
1,50 nF
5,0 mA
400 nA
0,25
0,30
µs
µs
0,09
0,10
µs
µs
0,55
0,65
µs
µs
0,13
0,16
µs
µs
mJ
33,0 mJ
mJ
65,0 mJ
1800
A
0,06 K/W
0,048
K/W
-40 125 °C
preparedby:MB
approvedby:WR
dateofpublication:2013-10-02
revision:3.1
1
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS450R12KE3
AusgangskennlinieIGBT,Wechselrichter(typisch)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
900
Tvj = 25°C
Tvj = 125°C
750
600
AusgangskennlinienfeldIGBT,Wechselrichter(typisch)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=125°C
900
VGE = 19V
VGE = 17V
VGE = 15V
750 VGE = 13V
VGE = 11V
VGE = 9V
600
450 450
300 300
150 150
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5
VCE [V]
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
ÜbertragungscharakteristikIGBT,Wechselrichter(typisch)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
900
Tvj = 25°C
Tvj = 125°C
750
SchaltverlusteIGBT,Wechselrichter(typisch)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=1.6Ω,RGoff=1.6Ω,VCE=600V
140
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
120
100
600
80
450
60
300
40
150 20
0
56
preparedby:MB
approvedby:WR
7
89
VGE [V]
10 11 12
0
0
dateofpublication:2013-10-02
revision:3.1
4
150 300 450 600 750 900
IC [A]
4페이지 TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS450R12KE3
Schaltplan/circuit_diagram_headline
Gehäuseabmessungen/packageoutlines
J
preparedby:MB
approvedby:WR
dateofpublication:2013-10-02
revision:3.1
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ FS450R12KE3.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FS450R12KE3 | IGBT-Module | Infineon |
FS450R12KE3 | IGBT-Module | eupec |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |