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96NQ03LT PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 96NQ03LT
기능 N-channel enhancement mode field-effect transistor
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96NQ03LT 데이터시트, 핀배열, 회로
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
Rev. 03 — 23 October 2001
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP96NQ03LT in SOT78 (TO-220AB)
PHB96NQ03LT in SOT404 (D2-PAK)
PHD96NQ03LT in SOT428 (D-PAK).
2. Features
s Low gate charge
s Low on-state resistance.
3. Applications
s Optimized as a control FET in DC to DC converters.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
[1]
mb
mb
3 source (s)
mb mounting base,
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
2
1
Top view
3
MBK091
SOT428 (D-PAK)
Symbol
g
MBB076
d
s
[1] It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.




96NQ03LT pdf, 반도체, 판매, 대치품
Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Rth(j-mb) thermal resistance from junction to mounting
base
Rth(j-a) thermal resistance from junction to ambient
Conditions
Figure 4
vertical in still air; SOT78 package
mounted on a printed circuit board; minimum
footprint; SOT404 and SOT428 packages
7.1 Transient thermal impedance
Value Unit
1.3 K/W
60 K/W
50 K/W
10
Zth(j-mb)
(K/W)
03af10
1
δ = 0.5
0.2
10-1 0.1
0.05
0.02
10-2
P
δ
=
tp
T
single pulse
tp
T
t
10-3
10-5
10-4
10-3
10-2
10-1
1 10
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08963
Product data
Rev. 03 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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96NQ03LT 전자부품, 판매, 대치품
Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
2.5
VGS(th)
(V)
2
1.5
1
max
typ
min
03aa33
10-1
ID
(A)
10-2
10-3
10-4
03aa36
min typ max
0.5 10-5
0
-60 0 60 120 180
Tj (oC)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-6
0 0.5 1 1.5 2 2.5 3
VGS (V)
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
104 03af16
C
(pF)
103
Ciss
Coss
Crss
102
10-1
1
10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 08963
Product data
Rev. 03 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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