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PDF MUR470 Data sheet ( Hoja de datos )
| Número de pieza | MUR470 | |
| Descripción | HIGH EFFICIENCY RECTIFIER | |
| Fabricantes | Galaxy Semi-Conductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MUR470 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
MUR470 --- MUR4100
VOLTAGE RANGE: 700---1000 V
CURRENT: 4.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High crrent capability
Easily cleaned with freon, alcohol, lsopropand
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-27, molded plastic
Terminals: Axial leads,solderable per MIL-STD- 202 ,
Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces, 1.15 grams
Mounting: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
MUR470 MUR480 MUR490 MUR4100 UNITS
Maximum recurrent peak reverse voltage
VRRM 700 800 900
Maximum RMS voltage
VRMS 490 560 630
Maximum DC blocking voltage
VDC 700 800 900
Maximum average forw ard rectified current
9.5mm lead length, @TA=75
IF(AV)
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 4.0A
IFSM
VF
Maximum reverse current @TA=25
at rated DC blocking voltage @TA=100
Maximum reverse recovery time (Note1)
IR
trr
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
CJ
RθJA
TJ
Storage temperature range
TSTG
NOTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
4.0
125.0
1.8
10.0
100.0
75
50
30
- 55 ----- + 150
- 55 ----- + 150
Document Number 0262022
BLGALAXY ELECTRICAL
1000
700
1000
V
V
V
A
A
V
A
ns
pF
/W
www.galaxycn.com
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